The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process

High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.

High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.

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Mat Res Soc.; Aixtron Semiconductor Technol GmbH.; Bede Sci Inc.; EMCORE.; Lake Shore Cryotron Inc.; Morton Int.; MMR Technol Inc.; Nichia Chem Ind.; Renishaw PLC.; Rockwell Int.; Siemens.; SULA Technol.; SVT Assoc Inc.; Thomas Swan & Co Ltd.; Toyoda Gosel Co Ltd.; Xerox Palo Alto Res Ctr.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

Mat Res Soc.; Aixtron Semiconductor Technol GmbH.; Bede Sci Inc.; EMCORE.; Lake Shore Cryotron Inc.; Morton Int.; MMR Technol Inc.; Nichia Chem Ind.; Renishaw PLC.; Rockwell Int.; Siemens.; SULA Technol.; SVT Assoc Inc.; Thomas Swan & Co Ltd.; Toyoda Gosel Co Ltd.; Xerox Palo Alto Res Ctr.