In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.

The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.

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Japan Soc Appl Phys.; Res Ctr Interface Quantum Electr.; Hokkaido Univ.; Asahi Glass Fdn.; Casio Sci Promot Fdn.; Fdn Promot Mat Sci & Technol Japan.; Inoue Fdn Sci.; Izumi Fdn Sci & Technol.; Nippon Steel Glass Fdn Mat Sci.; Ogasawara Fdn Sci & Technol.; Sapporo City Int Plaza.; Air Water Corp.; AIXTRON AG.; Daido Air Prod Electr Co Ltd.; Eiko Engn Corp.; EMF Ltd.; EPICHEM Ltd.; Furukawa Elect Corp.; Hitachi Ltd.; Hitachi Cable Ltd.; Hitachi Plant Engn & Construct Co Ltd.; Int Quantum Epitaxy Plc.; Kyoto Semicond Corp.; Matsushita Elect Ind Co Ltd.; Mitsubishi Chem Co Ltd.; MOCHEM GmbH.; NEC Corp.; Nichic Chem Co Ltd.; Nippon Sanso Corp.; NTT Bas Res Lab.; Oki Elect Ind Co Ltd.; Rohm Co Ltd.; Sony Corp.; Sumitomo Elect Ind Ltd.; Toshiba Corp.; Toyada Gossei Co Ltd.; Ube Ind Ltd.

Chinese Acad Sci, Inst Semicond, Lab Semicond Mat & Sci, Beijing 100083, Peoples R China

Japan Soc Appl Phys.; Res Ctr Interface Quantum Electr.; Hokkaido Univ.; Asahi Glass Fdn.; Casio Sci Promot Fdn.; Fdn Promot Mat Sci & Technol Japan.; Inoue Fdn Sci.; Izumi Fdn Sci & Technol.; Nippon Steel Glass Fdn Mat Sci.; Ogasawara Fdn Sci & Technol.; Sapporo City Int Plaza.; Air Water Corp.; AIXTRON AG.; Daido Air Prod Electr Co Ltd.; Eiko Engn Corp.; EMF Ltd.; EPICHEM Ltd.; Furukawa Elect Corp.; Hitachi Ltd.; Hitachi Cable Ltd.; Hitachi Plant Engn & Construct Co Ltd.; Int Quantum Epitaxy Plc.; Kyoto Semicond Corp.; Matsushita Elect Ind Co Ltd.; Mitsubishi Chem Co Ltd.; MOCHEM GmbH.; NEC Corp.; Nichic Chem Co Ltd.; Nippon Sanso Corp.; NTT Bas Res Lab.; Oki Elect Ind Co Ltd.; Rohm Co Ltd.; Sony Corp.; Sumitomo Elect Ind Ltd.; Toshiba Corp.; Toyada Gossei Co Ltd.; Ube Ind Ltd.