Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE
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2002
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Resumo |
Wet etching characteristics of cubic GAN (c-GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated. The samples are etched in HCl, H_3PO_4, KOH aqueous solutions, and molten KOH at temperatures in the range of 90~300 ℃. It is found that different solution produces different etch figure on the surfaces of a sample. KOH-based solutions produce rectangular pits rather than square pits. The etch pits elongate in [1(1-bar)0] direction, indicating asymmetric etching behavior in the two orthogonal <110> directions. An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior. In addition, it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c-GaN epilayers. Wet etching characteristics of cubic GAN (c-GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated. The samples are etched in HCl, H_3PO_4, KOH aqueous solutions, and molten KOH at temperatures in the range of 90~300 ℃. It is found that different solution produces different etch figure on the surfaces of a sample. KOH-based solutions produce rectangular pits rather than square pits. The etch pits elongate in [1(1-bar)0] direction, indicating asymmetric etching behavior in the two orthogonal <110> directions. An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior. In addition, it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c-GaN epilayers. 于2010-11-23批量导入 zhangdi于2010-11-23 13:08:18导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:08:18Z (GMT). No. of bitstreams: 1 5084.pdf: 359496 bytes, checksum: 0a86b6cb9cdea93752e9f5068902638f (MD5) Previous issue date: 2002 国家自然科学基金(批准号:698251 7),NSFC-RGC联合基金(批准号:5 1161953,N-HKU 28/ ) Institute of Semiconductors, The Chinese Academy of Sciences 国家自然科学基金(批准号:698251 7),NSFC-RGC联合基金(批准号:5 1161953,N-HKU 28/ ) |
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Idioma(s) |
英语 |
Fonte |
Shen Xiaoming;Feng Zhihong;Feng Gan;Fu Yi;Zhang Baoshun;Sun Yuanping;Zhang Zehong;Yang Hui.Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE,半导体学报,2002,23(7):707-712 |
Palavras-Chave | #光电子学 |
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期刊论文 |