红壤坡面降雨入渗及产流产沙特征试验研究

采用室内模拟降雨研究了不同降雨强度和坡度对红壤坡面降雨入渗、产流产沙的影响。结果表明:产流时间随降雨强度和坡度的增大而提前。对于入渗率较低的红壤坡面,径流强度主要受坡面承雨强度的影响,径流强度随雨强增大而增大,随坡度增大而减小。坡面入渗率随降雨强度的增大表现为先增大后减小。降雨强度增大能够增加水分入渗,但这种促进作用仅在一定的降雨强度范围内起作用。坡面入渗率随坡度增大表现为先增大后减小,20°左右存在一个坡面入渗率变化的临界坡度。坡面细沟侵蚀发展状况对稳定坡面入渗率有比较大的影响。径流率和入渗率与降雨历时的关系分别可以用幂函数和对数函数描述。在75,100 mm/h降雨强度下,产沙量随坡度的增大而增大,而50 mm/h降雨强度下,产沙量在20°时达到最大值而后出现下降,在20°附近存在一个侵蚀产沙量变化的临界坡度。

Properties of cubic GaN grown by MBE

We review our investigation of cubic GaN films on (001) GaAs, focusing on the structural, optical, and electrical properties of these films. Cubic GaN films grown epitaxially on GaAs suffer from the large lattice mismatch between these two materials in that they contain extremely high densities of structural defects. Surprisingly, the optical quality of these films does not seem much affected by the presence of defects, as intense photoluminescence is detected a? room temperature and above. Finally, the rather high background electron concentrations in our films is shown to be a consequence of contamination with O and not to be an intrinsic property of cubic phase GaN. (C) 1997 Elsevier Science S.A.

THERMAL POPULATION IN ASYMMETRIC DOUBLE WELLS COUPLED BY HOLE MIXING TUNNELING

The thermal population in photocarrier systems coupled by hole mixing tunneling is studied by an analysis of the high energy tails in cw photoluminescence spectra of asymmetric coupled double wells. Photocarriers in wide well are heated due to hole transfer from the narrow well through resonant tunneling as well as by photon heating. The influences of the excitation intensity and lattice temperature on the tunneling transfer and thermal population are discussed.

LBO晶体非临界相位匹配倍频研究

利用LBO晶体对Nd:YAG ns激光器进行了腔外倍频实验研究,实验中LBO晶体采用I类非临界相位匹配(NCPM),温度调谐,将倍频转换效率和温度调谐的理论值与实验数据进行了对比,实验结果基本与理论值相符,当基频光的单脉冲能量为1.3J时,获得了840mJ的532nm倍频绿光输出,最高转换效率达到65%,倍频光能量不稳定度小于±3%

通过倾斜多晶硅p-n结光电器件提高光电转换性能

本研究针对多晶硅p-n结光伏器件开展工作。基于倾斜光电转换器件的思想，倾斜本研究采用的光电转换器件使入射光线与器件表面法线成75度的夹角，从而使红外光在器件内形成多次全反射。这种内部全反射增加了光在器件内的光程，使得光在器件内的吸收得以增加。从采光的角度上发现，倾斜多晶硅光电转换器件可使器件的光电转换效率提高15%。此外，还发现了由倾斜器件造成开路电压稍微减小的现象并给予了解释。

缀饰激子在半导体微腔中的辐射

建立了半导体微腔的缀饰激子模型。在VCSEL器件量子阱中的激子首先通过内电磁场与腔耦合,形成缀饰态。而后作为多粒子过程,缀饰激子与腔内真空场耦合产生辐射。通过QED方法,得到偶极子辐射密度方程和系统能量衰变方程。

CoSi2超薄外延膜的生长研究

于2010-11-23批量导入

一种新的非均匀减薄法-选择阳极氧化法

于2010-11-23批量导入