Design, fabrication, and characterization of an ultracompact low-loss photonic crystal corner mirror

An ultracompact, low-loss, and broad-band corner mirror, based on photonic crystals, is investigated in this paper. Based on the theoretical analysis of the loss mechanism, the boundary layers of the photonic crystal region are revised to improve the extra losses, and the transmission characteristics are evaluated by using the 3-D finite-difference time-domain method. The device with optimized structure was fabricated on silicon-on-insulator substrate by using electron-beam lithography and inductively coupled plasma etching. The measured extra losses are about 1.1 +/- 0.4 dB per corner mirror for transverse-electronic polarization for the scanning wavelength range of 1510-1630 nm. Dimensions of the achieved PC corner mirror are less than ;7 x 7 mu m(2), which are only about one tenth of conventional wave-guide corner mirrors.

Room-temperature continuous-wave electrically injected InP-GaInAsP equilateral-triangle-resonator lasers

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 pm and the output-waveguide width of 1 or 2 pm are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-mu m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively.

Realization of an ultracompact low-loss photonic crystal corner mirror

We report on the realization and characterization of an ultracompact, low-loss, and broadband corner mirror based on photonic crystals (PCs). By modifying the boundary layers of the PC region, extra losses of 1.1 +/- 0.4 dB per corner mirror are achieved for transverse-electronic polarization for silicon-on-insulator ridge waveguides fabricated by electron beam lithography and inductively coupled plasma etching. Dimensions of the PC corner mirror are less than 7 x 7 mu m(2), which are only about one tenth of conventional waveguide corner mirrors.

A photonic crystal waveguide with silicon on insulator in the near-infrared band

A two-dimensional (2D) photonic crystal waveguide in the Gamma-K direction with triangular lattice on a silicon-on insulator (SOI) substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion (PWE) methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590 nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630 nm, which can be considered as due to the unpolarized source used in the transmission measurement.

Equilateral-triangle-resonator injection lasers with directional emission

Equilateral-triangle-resonator (ETR) lasers with an output waveguide jointed at one vertex of the resonator are fabricated on (100) GaInAsP-InP wafers using photolithography and a two-step inductively coupled plasma (ICP) etching technique. Distinct peaks with the mode spacing of longitudinal mode intervals are observed in the luminescence spectra at room temperature. Furthermore, some minor peaks appear in the middle of the main peaks, which can be attributed to the first-order transverse modes as predicted in the theoretical results. CW directional lasing emissions are achieved for ETR lasers with side lengths ranging from 15 to 30 pm up to 200 K. The temperature dependences of the threshold current and lasing wavelength are measured for an ETR laser with the side length of 20 mu m from 80 to 200 K. The observed threshold current rapidly increases as temperature increases over 170 K.

Novel folding 8x8 silicon-based optical matrix switch with tapered waveguides and self-aligned corner mirrors

Novel folding 8 x 8 matrix switches based on silicon on insulator were demonstrated. In the design, single-mode rib waveguides and multimode interferences are connected by optimized tapered waveguides to reduce the mode coupling loss between the two types of waveguides. The self-aligned method was applied to the key integrated turning mirrors for perfect positions and low loss of them. A mixed etching process including inductively coupled plasma and chemical etching was employed to etch waveguides and mirrors, respectively. The compact size of the device is only 20 x 3.2 mm(2). The switch element with high switching speed and low power consumption is presented in the matrix. The average insertion loss of the matrix is about -21 dB, and the excess loss of one mirror is measured of -1.4 dB. The worst crosstalk is larger than 21 dB. Experimental results illuminate that some of the main characteristics of optical matrix switches are. developed in the modified design, which is in accord with theoretic analyses.

Characteristics of triangle and square InP/InGaAsP microlasers

Directional emission triangle and square InGaAsP/InP lasers have been fabricated by standard photolithography, inductively coupled plasma etching technique combined with wet chemical etching process. In this article, the characteristics of the microcavity lasers are presented. For an equilateral triangle microcavity laser with the side length of 30 mu m, we got the laser spectra fitted very well with the mode wavelength formulate LIP to the 8(th) transverse mode at room temperature. But the laser spectra are usually more complex than the formulae for the lasers, especially for the lasers with a smaller side length. For a square microcavity laser with side length of 20 mu m, we observed the mode competition between the Fabry-Perot (FP) modes and Whispering-Gallery (WG) modes at 200K. The output spectra below the threshold have the mode interval of FP modes with a large mode interval, and the laser spectra agree very well with the WG modes, which have mode interval less than the FP modes. The output spectra are dominated by the FP modes below the threshold, because the FP modes have a higher output coupling efficiency than the WG modes.

High Q microring resonator in silicon-on-insulator rib waveguides - art. no. 68380J

A high quality (Q) factor microring resonator in silicon-on-insulator rib waveguides was fabricated by electron beam lithography, followed by inductively coupled plasma etching. The waveguide dimensions were scaled down to submicron, for a low bending loss and compactness. Experimentally, the resonator has been realized with a quality factor as high as 21,200, as well as a large extinction ratio 12.5dB at telecommunication wavelength near 1550nm. From the measured results, propagation loss in the rib waveguide is determined as low as 6.900/cm. This high Q microring resonator is expected to lead to high speed optical modulators and bio-sensing devices.

Realization of SOI submicrometer optical waveguide components - art. no. 68380L

Submicrometer channel and rib waveguides based on SOI (Silicon-On-Insulator) have been designed and fabricated with electron-beam lithography and inductively coupled plasma dry etching. Propagation loss of 8.39dB/mm was measured using the cut-back method. Based on these so-called nanowire waveguides, we have also demonstrated some functional components with small dimensions, including sharp 90 degrees bends with radius of a few micrometers, T-branches, directional couplers and multimode interferometer couplers.

Design and Fabrication of a Photonic Crystal Channel Drop Filter Based on an Asymmetric Silicon-on-Insulator Slab

We report on the design and fabrication of a photonic crystal (PC) channel drop filter based on an asymmetric silicon-on-insulator (SOI) slab. The filter is composed of two symmetric stick-shape micro-cavities between two single-line-defect (W1) waveguides in a triangular lattice, and the phase matching condition for the filter to improve the drop efficiency is satisfied by modifying the positions and radii of the air holes around the micro-cavities. A sample is then fabricated by using electron beam lithography (EBL) and inductively coupled plasma (ICP) etching processes. The measured 0 factor of the filter is about 1140, and the drop efficiency is estimated to be 73% +/- 5% by fitting the transmission spectrum.

Continuous-wave electrically injected InP/GaInAsP equilateral-triangle-resonator lasers

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are fabricated using standard photolithography and inductively-coupled-plasma etching techniques. Continuous-wave electrically injected 1550 nm ETR laser with side length ranged from 15 to 30 tm are realized at room temperature.

Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity and analyzes the optical characterization of cavity modes at room temperature. Single InAs/InGaAs quantum dots (QDs) layer was embedded in a GaAs waveguide layer grown on an Al0.7Ga0.3As layer and GaAs substrate. The patterning of the structure and the membrane release were achieved by using electron-beam lithography, reaction ion etching, inductively coupled plasma etching and selective wet etching. The micro-luminescence spectrum is recorded from the fabricated nanocavities, and it is found that some high-order cavity modes are clearly observed besides the lowest-order resonant mode is exhibited in spite of much high rate of nonradiative recombination. The variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed to improve the probability of achieving spectral coupling of a single QD to a cavity mode.

ICP-OES的悬浮进样方式及ICP-MS的碰撞/反应池技术的研究与应用

本论文分为两部分：1. 综述部分（第一章和第二章），评述了悬浮进样方式在电感耦合等离子体发射光谱法（ICP-OES）中的研究与应用；电感耦合等离子体质谱（ICP-MS）中碰撞/反应池技术研究的新进展。2. 实验部分（第三章至第九章），内容包括针对不同性质的样品悬浮液选择适当的稳定剂和悬浮雾化ICP-OES的校准方法研究；以混合碰撞/反应气体解决难度较大的高纯氧化钕中稀土杂质测定的干扰问题；以及浊点萃取-石墨炉原子吸收法测定环境样品中痕量镉、氢化物发生-原子荧光光谱法测定铅基合金中砷和植物样品中锗等实用性强的分析方法研究。 ICP的传统进样方式是将样品转化成水溶液形式，以溶液方式进样。然而大多数样品是以固态形式存在，许多样品相当难溶或难熔。采用直接固体进样方法对这些样品进行分析，是分析工作者追求的目标之一。悬浮液进样是一种固体直接进样方法，除了具有其它固体进样技术的优点外，其最大优点是可以像溶液雾化一样用标准水溶液校准。本研究针对实际分析工作中遇到的具体样品，对悬浮进样ICP-OES技术进行了比较深入的研究，成功解决了样品处理繁琐和样品难以处理等困难。对特殊地质样品和激光晶体材料（Nd:YAG）的悬浮进样分析进行了探索。主要工作为：①建立分析地质样品中主量和微量元素的方法，标准水溶液可以成功地用于校准。优点是可以同时对地质样品中的Si和其它元素进行分析，避免了传统分析时需分别处理样品的麻烦。②探索了分析铌钽矿中铌和钽的应用。由于铌和钽具有强抗化学腐蚀性，所以溶液进样分析时样品处理过程复杂。结果表明，以标准水溶液校准时，只要样品研磨时间延长至5 h，即可获得悬浮进样的满意的回收率。③研究了分析掺钕钇铝石榴石(Nd:YAG)中钕掺杂量的可行性。研究表明，加入适量聚丙烯酸作分散剂并调节pH为6，可以得到稳定悬浮液；以通用标准加入法（GSAM）校准可以得到满意的结果。 我国的稀土资源占世界的80％以上，高纯稀土氧化物是高科技领域中的重要材料。碰撞/反应池技术是目前四极杆ICP-MS消除干扰的先进技术，可以选择性地减少某些基体干扰，使背景和检测限得到显著的改进。本实验选择氧化钕（有7个同位素）作为研究对象，采用碰撞/反应池技术重点解决四极杆ICP-MS方法对高纯Nd2O3中稀土杂质进行测定时，基体Nd对Tb、Dy和Ho严重的氧化物或氢氧化物干扰难题。研究结果如下：①在四极杆高分辨率模式下，可以消除Nd对Pr的相邻峰的拖尾干扰；②采用碰撞/反应池技术，设计了10% O2-10% Ar-80% He混合气体作为碰撞/反应气，将Tb、Dy和Ho分别转化为相应的氧化物离子进行测定，成功地消除了基体Nd对Ho的干扰；Nd对Tb和Dy造成干扰的表观浓度显著降低。本方法可直接测定纯度为6N的高纯Nd2O3中的Ho；对纯度为6N的高纯Nd2O3中的Tb和Dy进行扣除，可以分析纯度达5N的高纯Nd2O3中的Tb和Dy。与文献报道的其它消除基体Nd干扰的方法相比较，此方法能够对纯度更高的Nd2O3进行直接分析，且操作简便。此方法也可进一步拓宽，有望解决其它轻稀土氧化物对中重稀土检测的质谱干扰问题。 论文的7～9章的工作包括：浊点萃取-GFAAS测定环境样品中痕量镉、HG-AFS分析铅基合金中砷和植物样品中锗的研究。针对实际分析工作中的具体困难，以上工作分别解决了分析元素含量低、测定干扰严重及样品处理的问题，建立了实用性强、准确度高的分析方法，具有实际应用价值。

The fabrication of GaN-based nanopillar light-emitting diodes

InGaN/GaN multiple quantum well-based light-emitting diode (LED) nanopillar arrays were fabricated using Ni self-assembled nanodots as etching mask. The Ni nanodots were fabricated with a density of 6 x 10(8)-1.5 x 10(9) cm(-2) and a dimension of 100-250 nm with varying Ni thickness and annealing duration time. Then LED nanopillar arrays with diameter of approximately 250 nm and height of 700 nm were fabricated by inductively coupled plasma etching. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved for the nanopillars and a blueshift as well as a decrease in full width at half maximum of the PL peak are also observed. The method of additional chemical etching was used to remove the etching-induced damage. Then nano-LED devices were further completed using a planarization approach to deposit p-type electrode on the tips of nanopillars. The current-voltage curves of both nanopillars and planar LED devices are measured for comparison.

One-Dimensional InP-Based Photonic Crystal Quantum Cascade Laser Emitting at 5.36μm

An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithography instead of electron beam lithography and using inductively coupled plasma etching, four-period air-semiconductor couples are defined as Bragg reflectors at one end of the resonator. The spectral measurement at 80K shows the quasi-continuous-wave operation with the wavelength of 5.36μm for a 22μm-wide and 2mm-long epilayer-up bonded device.