The fabrication of GaN-based nanopillar light-emitting diodes

InGaN/GaN multiple quantum well-based light-emitting diode (LED) nanopillar arrays were fabricated using Ni self-assembled nanodots as etching mask. The Ni nanodots were fabricated with a density of 6 x 10(8)-1.5 x 10(9) cm(-2) and a dimension of 100-250 nm with varying Ni thickness and annealing duration time. Then LED nanopillar arrays with diameter of approximately 250 nm and height of 700 nm were fabricated by inductively coupled plasma etching. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved for the nanopillars and a blueshift as well as a decrease in full width at half maximum of the PL peak are also observed. The method of additional chemical etching was used to remove the etching-induced damage. Then nano-LED devices were further completed using a planarization approach to deposit p-type electrode on the tips of nanopillars. The current-voltage curves of both nanopillars and planar LED devices are measured for comparison.

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This work is supported by the National Natural Science Foundation of China under Grant Nos. 60506001, 60776047, 60976045, and 60836003, the National Basic Research Programme of China under Grant No. 2007CB936700, and the National Science Fundation for Distinguished Young Scholars under Grant No. 60925017.

国内

This work is supported by the National Natural Science Foundation of China under Grant Nos. 60506001, 60776047, 60976045, and 60836003, the National Basic Research Programme of China under Grant No. 2007CB936700, and the National Science Fundation for Distinguished Young Scholars under Grant No. 60925017.