Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity and analyzes the optical characterization of cavity modes at room temperature. Single InAs/InGaAs quantum dots (QDs) layer was embedded in a GaAs waveguide layer grown on an Al0.7Ga0.3As layer and GaAs substrate. The patterning of the structure and the membrane release were achieved by using electron-beam lithography, reaction ion etching, inductively coupled plasma etching and selective wet etching. The micro-luminescence spectrum is recorded from the fabricated nanocavities, and it is found that some high-order cavity modes are clearly observed besides the lowest-order resonant mode is exhibited in spite of much high rate of nonradiative recombination. The variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed to improve the probability of achieving spectral coupling of a single QD to a cavity mode.

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This research is supported by the 973 Program of China (Grant Nos. 2006CB604904 and 2006CB604908) and the National Nature Science Foundation of China (Grant Nos. 60676029, 60990315 and 60625402). The authors are sincerely grateful to Drs. Zhong-chao Fan at Engineering Research Center of Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, and Drs. Junjie Li at Laboratory of Micro-fabrication, Institute of Physics, Chinese Academy of Science, for valuable discussions, and to Mrs. Ying Hu and Mrs. Pin Liang for their help and encouragement throughout the course of work.

国内

This research is supported by the 973 Program of China (Grant Nos. 2006CB604904 and 2006CB604908) and the National Nature Science Foundation of China (Grant Nos. 60676029, 60990315 and 60625402). The authors are sincerely grateful to Drs. Zhong-chao Fan at Engineering Research Center of Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, and Drs. Junjie Li at Laboratory of Micro-fabrication, Institute of Physics, Chinese Academy of Science, for valuable discussions, and to Mrs. Ying Hu and Mrs. Pin Liang for their help and encouragement throughout the course of work.