Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates

We show that part of the reflectance difference resonance near the E-0 energy of ZnSe is due to the anisotropic in-plane strain in the ZnSe thin films, as films grown on three distinctly different substrates, GaAs, GaP, and ZnS, all show the resonance at the same energy. Such anisotropic strain induced resonance is predicted and also observed near the E-1/E-1+Delta(1) energies in ZnSe grown on GaAs. The theory also predicts that there should be no resonance due to strain at, the E-0+Delta(0) energy, which is consistent with experiments. The strain anisotropy is rather independent of the ZnSe layer thickness, or whether the film is strain relaxed. For ZnSe films with large lattice mismatch with substrates, the resonance at the E-1/E-1+Delta(1) energies is absent, very likely due to the poor crystalline quality of the 20 nm or so surface layer. (C) 2000 American Vacuum Society. [S0734-211X(00)05604-3].

Pressure behavior of deep centers in ZnSxTe1-x alloys

We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center in the ZnSxTe1-x alloy.

Optical properties of ZnSxTe1-x mixed crystals

The Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x<1), were investigated. The results of Raman studies show that the phonons in ZnSxTe1-x mixed crystals display two-mode behavior. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflection spectra and the temperature dependence of the photoluminescence of ZnSxTe1-x from 10 to 300K were employed to find out the origins of PL emissions in ZnSxTe1-x with different x values, The results indicate that the emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow level emission center, while for the samples with large x values, they are designated to strong radiative recombinations of Te isoelectronic centers.

Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals

We have investigated the Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x < 1). The results of Raman studies show that the ZnSxTe1-x mixed crystals display two-mode behaviour. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflectivity spectra and the: temperature dependence of the photoluminescence of ZnSxTe1-x have been employed to find out the origin of PL emissions in ZnSxTe1-x with different x values. The results indicate that emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow-level emission centre, while as x approaches 1, they are designated to strong radiative recombination of Te isoelectronic centres (IECs).

Spatially separated excitons in quantum-dot quantum well structures

In the framework of the effective-mass envelope-function theory, the electronic and optical properties of a spherical core-shell quantum-dot quantum well (QDQW) structure with one and two wells have been investigated. The results show that the energies of electron and hole states depend sensitively on the well thickness and core radius of quantum-dot quantum well structure. An interesting spatially separated characteristic of electron and hole in QDQW is found and enhanced significantly in the two-wells case. The normalized oscillator strength for the optical transition between the electron and hole states in QDQW exhibits a deep valley at some special well thickness. The Coulomb interaction between the electron and hole is also taken into account. [S0163-1829(98)02412-6].

稀土-聚合物纳米复合材料的制备与表征

纳米材料以其特有的优异性能成为下一代信息技术、能源技术和生物医学技术的重要基础。纳米材料的研究是一个多学科交叉的领域，受到各国科学家及政府的极大重视，成为当前科学研究的热点前沿领域之一。近年来，无机纳米微粒与聚合物复合而成的无机-有机纳米复合材料可能成为集无机、有机、纳米等诸多材料的优良特性于一身的新型功能材料，倍受各国研究者的关注，对无机-有 机纳米复合材料的研究构成了当前纳米材料领域的新热点。我们在当今科学研究的前沿领域内，通过大量文献调研，选择稀土化合物为 目标化合物，开展了研究工作。采用新方法制备了ZnS、ZnS:Eu、ZnS:Mn、ZnS:Mn,Eu和CeO_2纳米微粒，制备了稀土硫化物、CeO_2纳米微粒与聚苯乙烯的纳米复合材料，对所制备的材料进行了表征，研究了反应过程及材料的发光特性，取得了一些创新性结果。1．首次采用固相法在接近室温和室温条件下，分别以硫代乙酰胺(TAA)和硫化钠为原料与醋酸锌进行反应，成功地制备出ZnS纳米微粒，通过XRD、TEM、SPS、荧光光谱等对样品进行了表征，通过差热分析对反应机理进行了研究，得到以下结论：(1)．ZnS纳米微粒具有立方面心结构，为闪锌矿型ZnS。发现TAA与醋酸锌通过低温固相法制备ZnS纳米微粒的最佳温度为100℃，低于此温度反应进行得不完全。提高反应温度将使ZnS纳米微粒的尺寸增大。(2)．100℃下合成的ZnS纳米微粒的晶粒粒径为3.2 nm，TEM观察到的每个ZnS纳米微粒是由更小的ZnS晶粒构成的多晶颗粒，平均颗粒尺寸为40 nm左右。(3)．TAA与醋酸锌反应的历程几乎同时经历了以下几个过程，其中包括TAA的熔融，TAA的分解并产生硫化氢，产生的硫化氢与醋酸锌反应生成醋酸及ZnS，醋酸的气化等，ZnS纳米微粒在上述过程中得以迅速生成，产生的气体物质起到了控制颗粒进一步生长的作用。2．首次采用低温固相法制备出掺杂的ZnS纳米微粒，ZnS:Eu、ZnS:Mn和ZnS:Mn，Eu，研究了制备条件对粒径及发光的影响。研究表明，灼烧温度对掺杂的ZnS纳米微粒的尺寸影响较大，温度升高粒径随之增大：灼烧时间及掺杂浓度对粒径影响很小。荧光光谱中出现了掺杂离子的特征发光，增大掺杂离子浓度及提高灼烧温度可使发光增强。3．首次发现ZnS:Mn纳米粒子经紫外光照射后出现了荧光增强现象。无论是波长为254 nm还是365 nm的紫外光照射后都可以观察到上述现象，并且发现在一定时间范围内，发光亮度随着照射时间的延长而增强。产生这种现象的原因可能是纳米微粒的表面态得到改善，使无辐射通道减少，因而辐射强度提高。4．首次采用表面光电压谱对ZnS纳米微粒进行了表征，观察到表面光电压谱发生了蓝移，ZnS纳米微粒有丰富的表面态。荧光光谱中观察到产生于表面态的陷阱荧光，并发生蓝移。5．采用W/O微乳液法，选用多种非离子型表面活性剂，成功地制备出粒径很小、颗粒均匀的CeO_2纳米晶，对制备过程中的影响因素(如灼烧温度、水与表面活性剂的摩尔比、Ce~(3+)的浓度、灼烧时间、表面活性剂种类等)进行了详细研究。结果如下：(1)．灼烧温度是影响CeO_2纳米微粒尺寸及形貌的关键因素。找到制备纯净的Ce02纳米晶的最佳温度为500℃，低于此温度CeO_2为无定形态，高于此温度则CeO_2纳米微粒的形貌规整但粒径增大。CeO_2纳米微粒的晶格畸变率随着灼烧温度的升高和粒径的增大而减小。(2)．W(水与表面活性剂的摩尔比)、Ce~(3+)浓度、灼烧时间、表面活性剂种类等也对CeO_2纳米微粒的尺寸有影响，但其影响小于灼烧温度的影响。(3)．首次在高分辨条件下通过TEM观察到CeO_2纳米晶的条纹相结构。6．首次将CeO_2纳米微粒与聚苯乙烯复合，成功地制备出CeO_2聚苯乙烯纳米复合材料，对材料进行了表征。(1)．CeO_2/聚苯乙烯纳米复合材料的IR光谱中有Ce-O键的振动吸收，且比通常CeO_2的Ce-O键的振动吸收向高能方向移动，说明CeO_2粒径较小。(2)．XPS谱中Ce的3d_(5/2)和3d_(3/2)结合能较CeO_2的标准谱向高能方向发生了移动，表明CeO_2与表面活性剂及聚苯乙烯之间存在着某种化学键作用。7．首次采用原位合成法制备出稀土硫化物聚苯乙烯纳米复合材料，并通过荧光光谱、磁性、光电子能谱、透射电镜等手段对它们进行了表征。研究了该复合材料的磁性质、荧光光谱、XPS谱、微结构与掺稀土聚苯乙烯相比发生的变化，分析了产生上述变化的原因。(1)．在掺Eu聚苯乙烯复合材料的激发光谱和发射光谱中可见Eu~(3+)的激发和发射峰。Eu~(3+)离子处于对称性很低的聚合物环境中，发射光谱中所出现的~5D_0 → ~7F_J(J = 0，l，2，3，4)跃迁的发射峰中~7F_l和~7F_2等能级解除简并发生了能级劈裂。随着Eu浓度增大，Eu~(3+)离子的发射峰强度增加。(2)．稀土硫化物聚苯乙烯纳米复合材料的发射光谱中在400 nm左右有宽带发射，且经紫外光照射后其发光强度降低，这是由于H_2S与Eu~(3+)发生而生成的不很稳定的Eu~(2+)经紫外光照射后被氧化成更为稳定的Eu~(3+)。(3)．稀土硫化物聚苯乙烯纳米复合材料和掺Eu聚苯乙烯复合材料相比，在荧光光谱、磁性、XPS谱和微结构等方面存在较大的差别。研究表明，在稀土硫化物聚苯乙烯复合材料中有较多的Eu~(3+)离子处于无反演对称性的格位，使得它的发射光谱在615 nm处的发光峰为最强；稀土硫化物聚苯乙烯纳米复合材料的饱和磁化强度较掺Eu聚苯乙烯复合材料的低；稀土硫化物聚苯乙烯纳米复合材料的球粒尺寸明显大于掺Eu聚苯乙烯复合材料的球粒尺寸，远大于纯聚苯乙烯的球粒尺寸。

Sulfur forming an isoelectronic center in zinc telluride thin films

ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence (PL) as a function of temperatures, excitation powers, and hydrostatic pressures. A sulfur-related emission peak, labeled as P-2, is identified as a deep-level emission by hydrostatic-pressure PL measurement. This indicates that sulfur atoms form isoelectronic centers in a ZnTe matrix. The results qualitatively agree with the theoretical prediction and show experimental evidence of isoelectronic S in ZnTe. A model is proposed to explain the emission mechanisms in the ZnTe1-xSx system with small x values.

Ag surface plasmon enhanced double-layer antireflection coatings for GaAs solar cells

Surface plasmon enhanced antireflection coatings for GaAs solar cells have been designed theoretically. The reflectance of double-layer antireflection coatings (ARCs) with different suspensions of Ag particles is calculated as a function of the wavelength according to the optical interference matrix and the Mie theory. The mean dielectric concept was adopted in the simulations. A significant reduction of reflectance in the spectral region from 300 to 400 nm was found to be beneficial for the design of ARCs. A new SiO_2/Ag-ZnS double-layer coating with better antireflection ability can be achieved if the particle volume fraction in ZnS is 1%-2%.

折射率色散效应对晶体硅太阳电池反射率的影响

为了分析色散效应对晶体硅太阳电池反射率的影响,在考虑材料折射率色散效应的情况下,运用光学干涉矩阵计算了具有SiO_2单层减反射膜和MgF_2/ZnS双层减反射膜晶体硅太阳电池的反射率与波长的函数关系,并与实验结果和未考虑色散效应的计算结果进行了对比分析.结果表明:考虑折射率色散效应的计算结果与实验测量数据完全相符,而未考虑折射率色散效应的计算结果与实验测量数据相差较大,最大差值分别为21.5%和16.9%.

色散效应对GaAs太阳电池双层减反射膜的影响

考虑双层减反射膜材料的折射率色散效应，采用光学干涉矩阵法计算了SiO2／ZnSe和SiO2／ZnS两种GaAs太阳电池双层减反射膜的反射率与波长的函数曲线，以及加权平均反射率随着顶层减反射膜SiO2厚度变化的函数曲线，并与未考虑色散效应的情况进行了对比．计算结果表明，色散效应对双层减反射膜的反射率有较大的影响，特别是对300-500nm波长范围的影响更大，且对不同材料的减反射膜的影响也是不同的．与未考虑色散效应的情况相比，考虑色散效应后，SiO2／ZnSe双层减反射膜的最小加权平均反射率从1．14％增加到1．55％，而SiO2／ZnS双层减反射膜的最小加权平均反射率却从1．49％减小到1.46％．

半导体低维结构的压力光谱研究

研究了一些半导体低维结构的压力光谱.测得平均直径为26、52和62nm的In0.55Al0.45As/Al0.5Ga0.5As量子点发光峰的压力系数分别为82、94和98 meV/GPa.表明这些发光峰具有Γ谷的特性,这些量子点为Ⅰ型量子点.而平均直径为7nm的量子点发光峰的压力系数为-17 meV/GPa,具有X谷的特性.所以这种小量子点为Ⅱ型量子点.测得ZnS:Mn纳米粒子中Mn发光峰的压力系数为-34.6meV/GPa,与晶体场理论的预计一致.而DA对发光峰基本不随压力变化,表明它应该与ZnS基体中的表面缺陷有关.测得ZnS:Cu纳米粒子中Cu的发光峰的压力系数为63.2meV/GPa,与ZnS体材料的带隙压力系数相同.表明Cu引入的受主能级具有浅受主的某些特点.测得ZnS:Eu纳米粒子中Eu发光峰的压力系数为24.1meV/GPa,与晶体场理论的预计不同.可能和Eu的激发态与ZnS导带间的相互作用有关.

Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy

The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition.

Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates

We show that part of the reflectance difference resonance near the E-0 energy of ZnSe is due to the anisotropic in-plane strain in the ZnSe thin films, as films grown on three distinctly different substrates, GaAs, GaP, and ZnS, all show the resonance at the same energy. Such anisotropic strain induced resonance is predicted and also observed near the E-1/E-1+Delta(1) energies in ZnSe grown on GaAs. The theory also predicts that there should be no resonance due to strain at, the E-0+Delta(0) energy, which is consistent with experiments. The strain anisotropy is rather independent of the ZnSe layer thickness, or whether the film is strain relaxed. For ZnSe films with large lattice mismatch with substrates, the resonance at the E-1/E-1+Delta(1) energies is absent, very likely due to the poor crystalline quality of the 20 nm or so surface layer. (C) 2000 American Vacuum Society. [S0734-211X(00)05604-3].

Pressure behavior of deep centers in ZnSxTe1-x alloys

We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center in the ZnSxTe1-x alloy.

Uniform YVO4:Ln(3+) (Ln = Eu, Dy, and Sm) nanocrystals: Solvothermal synthesis and luminescence properties

Well-dispersed YVO4:Ln(3+) (Ln = Eu, Dy, and Sm) nanocrystals with uniform morphology and size have been synthesized via a facile solvothermal route. XRD results demonstrate that all of the three samples can be well indexed to the pure tetragonal phase Of YVO4, indicating that the Eu3+, Dy3+, and Sm3+ have been effectively doped into the host lattices of YVO4. TEM images show that the YVO4 nanocrystals exhibit ellipsoid shape and a mean size of about 20 nm, which is in good agreement with the estimation of XRD results.