Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy
Data(s) |
2003
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Resumo |
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition. The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:07导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:07Z (GMT). No. of bitstreams: 1 2825.pdf: 183488 bytes, checksum: 6aa5c7c42ad5a0c00b41b981efcbf0c1 (MD5) Previous issue date: 2003 会议主办方: UNIV SURREY Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China; Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China 会议主办方: UNIV SURREY |
Identificador | |
Idioma(s) |
英语 |
Publicador |
WILEY-V C H VERLAG GMBH PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY |
Fonte |
Li GH; Fang ZL; Su FH; Ma BS; Ding K; Han HX; Sou IK; Ge WK .Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy .见:WILEY-V C H VERLAG GMBH .PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2),PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY ,2003,401-406 |
Palavras-Chave | #半导体物理 #OPTICAL-ABSORPTION #ZNS-TE #TRANSITION #EDGE |
Tipo |
会议论文 |