Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy


Autoria(s): Li GH; Fang ZL; Su FH; Ma BS; Ding K; Han HX; Sou IK; Ge WK
Data(s)

2003

Resumo

The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition.

The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition.

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会议主办方: UNIV SURREY

Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China; Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

会议主办方: UNIV SURREY

Identificador

http://ir.semi.ac.cn/handle/172111/14861

http://www.irgrid.ac.cn/handle/1471x/105148

Idioma(s)

英语

Publicador

WILEY-V C H VERLAG GMBH

PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY

Fonte

Li GH; Fang ZL; Su FH; Ma BS; Ding K; Han HX; Sou IK; Ge WK .Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy .见:WILEY-V C H VERLAG GMBH .PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2),PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY ,2003,401-406

Palavras-Chave #半导体物理 #OPTICAL-ABSORPTION #ZNS-TE #TRANSITION #EDGE
Tipo

会议论文