Optical properties of ZnSxTe1-x mixed crystals


Autoria(s): Liu NZ; Zhu ZM; Li GH; Han HX; Wang ZP; Ge WK; Sou IK
Data(s)

1998

Resumo

The Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x<1), were investigated. The results of Raman studies show that the phonons in ZnSxTe1-x mixed crystals display two-mode behavior. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflection spectra and the temperature dependence of the photoluminescence of ZnSxTe1-x from 10 to 300K were employed to find out the origins of PL emissions in ZnSxTe1-x with different x values, The results indicate that the emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow level emission center, while for the samples with large x values, they are designated to strong radiative recombinations of Te isoelectronic centers.

Identificador

http://ir.semi.ac.cn/handle/172111/13068

http://www.irgrid.ac.cn/handle/1471x/65504

Idioma(s)

中文

Fonte

Liu NZ; Zhu ZM; Li GH; Han HX; Wang ZP; Ge WK; Sou IK .Optical properties of ZnSxTe1-x mixed crystals ,JOURNAL OF INFRARED AND MILLIMETER WAVES ,1998,17(5):338-344

Palavras-Chave #光电子学 #ZnSxTe1-x mixed crystals #photoluminescence #Raman scattering #ZNS1-XTEX ALLOYS #ZNS-TE #EXCITONS #FILMS #MODES #GAAS #VAPOR-PHASE EPITAXY
Tipo

期刊论文