328 resultados para PD-AG


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利用脉冲激光沉积(PLD)方法在Si衬底上制备了ZnO单晶体薄膜,并在不同温度下生长了Ag膜作为肖特基电极,研究了Ag与ZnO的接触特性.利用X射线衍射仪、扫描电子显微镜和Ⅰ-Ⅴ测试方法对样品的晶体质量、结构和电学性质进行了分析.结果表明,ZnO薄膜具有高度的c轴择优取向,Ag膜随生长温度的不同的晶体质量有较大差异.样品在室温下的Ⅰ-Ⅴ测试结果表明Ag电极的生长温度对Ag/ZnO接触性能有重要影响.在150℃和200℃生长的Ag电极实现了Ag与ZnO的肖特基接触,电极生长温度低于150℃和高于200℃的样品Ag与ZnO均为欧姆接触.经过分析,肖特基接触的形成依赖于在Ag与ZnO接触界面处形成的p型反型层.

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研究了Ag/AuGeNi/n-GaSb在150℃─450℃下合金处理对欧姆接触的的影响,最佳合金温度为220℃,此时接触电阻率为6.7×10~(-4)Ωcm~2。用AES和XRD研究了金属半导体界面处的扩散及物相变化,并讨论了接触电阻率与微结构的关系。

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采用结谱、光荧光等技术对Pd和Zt在GaAs中的光学和电学性质进行了研究.在GaAs:Pd中观测到三个能级,分别位于导带下0.4eV、0.60eV和价带上0.69eV.在GaAs:Zr中也观测到三个能级,分别位于导带下0.43eV和介带上0.32eV和0.55eV.基于深中心所表现出的Poole-Frenkel效应,讨论了一些中心对应的荷电态,对它们的俘获和对光致发光的影响也作了研究,结果表明:Pd和Zr在GaAs中均不是有效的复合中心.

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4d过渡杂质Mo、Pd在GaAs中分别引入E(0.42eV)、H(0.61eV)和E(0.66eV)、H(0.69eV)等能级。根据过渡杂质Mo和Pd在GaAs中的光电行为, 推测这些杂质在GaAs中不起有效复合中心的作用。图4参3

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国家自然科学基金

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于2010-11-23批量导入

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中科院基金

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于2010-11-23批量导入

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其它基金

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Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.

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The plasmon resonance absorption of the Ag/SiO2 nanocomposite film is investigated. The measured absorption spectra are compared with those calculated by the Mie theory. The results indicate that the Mie theory on the basis of classical electrodynamics can only partially explain the optical absorption spectra of the Ag/SiO2 nanocomposite film. We believe that the plasmon resonance absorption is mainly an intrinsic quality of the metal particle, and can be explained only with the electronic structure of the metal particle. In the latter, surface resonance state is introduced to systematically discuss the optical absorption spectra of the Ag/SiO2 nanocomposite film. (C) 2003 Elsevier Science B.V. All rights reserved.

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The structural evolution of the ordered N-N' dibutyl-substituted quinacridone (QA4C) multilayers (3 MLs) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (LEED) during organic molecular beam epitaxy (MBE). Experimental results of LEED patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. Multilayer growth can be achieved at the substrate temperatures below 300 K, while at the higher temperatures we can only get one ordered monolayer of QA4C. Two kinds of structures, the commensurate and incommensurate one, often coexist in the QA4C multilayer. With a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the QA4C bulk crystal, prevails with the layer of QA4C increasing to 3 MLs. The two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer.

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