Heteroepitaxy of cubic GaN: influence of interface structure

We report on the epitaxial growth and the microstructure of cubic GaN. The layers are deposited by plasma-assisted molecular beam epitaxy on GaAs and Si substrates. Despite the extreme lattice mismatch between these materials, GaN grows in the metastable cubic phase with a well-defined orientation-relationship to the GaAs substrate including a sharp heteroboundary. The preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice.

Formation trends of ordered self-assembled nanoislands on stepped substrates

The growth of ordered self-assembled nanoislands on stepped substrates is studied systematically by kinetic Monte Carlo simulations. As the terrace width is small, the formation of nanoislands is confined in the steps and nanoislands ordered in lines or nanowires can be obtained. The Schwoebel barrier at the step edges has a great influence on the evolution of both the size and space distributions of the islands. When the terrace width is relatively large, self-ordering of nanoislands in the center regions of the terraces happens. An unexpected trend of the nanoisland self-ordering is found as the deposition thickness is larger than 0.2 ML, which can be related to the attractive migrations between nearby islands.

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)

The structural evolution of the ordered N-N' dibutyl-substituted quinacridone (QA4C) multilayers (3 MLs) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (LEED) during organic molecular beam epitaxy (MBE). Experimental results of LEED patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. Multilayer growth can be achieved at the substrate temperatures below 300 K, while at the higher temperatures we can only get one ordered monolayer of QA4C. Two kinds of structures, the commensurate and incommensurate one, often coexist in the QA4C multilayer. With a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the QA4C bulk crystal, prevails with the layer of QA4C increasing to 3 MLs. The two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer.

Structure and properties of InAs/AlAs quantum dots for broadband emission

The InAs quantum dots (QDs) on an AlAs layer are grown on GaAs substrates by molecular beam epitaxy technique. The properties of materials and optics of such QD structures have been investigated by cross sectional transmission electron microscopy and photoluminescence (PL) techniques. It is discovered that the inhomogeneous strain filed mainly exists below InAs QDs layers in the case of no wetting layer. The full width at half maximums (FWHMs) and intensities of PL emission peaks of InAs QDs are found to be closely related to the thickness of the thin AlAs layers. The InAs QDs on an eight monolayer AlAs layer, with wide FWHMs and large integral intensity of PL emission peaks, are favorable for producing broadband QD superluminescent diodes, external-cavity QD laser with large tuning range.

Hydrothermal synthesis and thermoelectric transport properties of impurity-free antimony telluride hexagonal nanoplates

Impurity-free single-crystalline antimony telluride hexagonal nanoplates (see figure) are synthesized by a facile and quick hydrothermal treatment without any organic additives or templates. The inherent crystal structure is the driving force for the growth of these Sb2Te3 hexagonal nanoplates. Films of these nanoplates shows p-type behavior, and exhibit a promisingly high Seebeck coefficient of 425 mu V K-1 at room temperature.

Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film

The large-size domain and continuous para-sexiphenyl (p-6P) ultrathin film was fabricated successfully on silicon dioxide (SiO2) substrate and investigated by atomic force microscopy and selected area electron diffraction. At the optimal substrate temperature of 180 degrees C, the first-layer film exhibits the mode of layer growth, and the domain size approaches 100 mu m(2). Its saturated island density (0.018 mu m(-2)) is much smaller than that of the second-layer film (0.088 mu m(-2)), which begins to show the Volmer-Weber growth mode.

Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature

The para-sexiphenyl (p-6P) monolayer film induces weak epitaxy growth (WEG) of disk-like organic semiconductors, and their charge mobilities are increased dramatically to the level of the corresponding single crystals [Wang et al., Adv. Mater. 2007, 19, 2168]. The growth behavior and morphology of p-6P monolayer film play decisive roles on WEG. Here, we investigated the growth behavior of p-6P submonolayer film as a function of the substrate temperature. Its growth exhibited two different mechanisms at high and low substrate temperature.

Crystalline organic superlattice

Highly crystalline organic superlattice has great potential for providing innovative function in organic devices. With studies of the structure and fundamental electronical properties, we have demonstrated the phathalocynine organic superlattice, which is a structure composed of periodically alternating crystalline layers of H2Pc and F16CuPc. A periodical crystal structure and electronic structure appear in this organic superlattice system. High density of mobile electrons and holes distribute periodically in F16CuPc and H2Pc layers, respectively, leading to a significant change in intrinsic properties of organic semiconductors.

Single-crystal-like organic heterojunction with 40 nm thick charge accumulation layers

Single-crystal-like organic heterojunction films of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc) were fabricated by weak-epitaxy-growth method. The intrinsic properties of organic heterojunction were revealed through threshold voltage shift of field-effect transistors and measurement of single-crystal-like diodes. At both sides of the heterojunction interface 40 nm thick charge accumulation layers formed, which showed that the long carriers' diffusion length is due to the high crystallinity and low density of deep bulk traps of single-crystal-like films.

Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

Switch-on transient behavior of vanadium phthalocyanine based organic transistors

The authors investigated the switch-on transient properties of p-type vanadium phthalocyanine (VOPc) transistors, which were fabricated by weak epitaxy growth on ordered para-sexiphenyl (p-6P) layer. The overshoot phenomenon of drain current had been observed in the VOPc/p-6P transistors, which was explained by the filling of carriers in traps of organic films. The small overshoot value of about 35% and transient duration time of 2 ms demonstrated the low trap concentration in organic films, which were comparable to the reported hydrogenated amorphous-silicon thin-film transistors. Therefore, the VOPc/p-6P transistors can be applied in active matrix liquid crystal display as switch elements.

High mobility vanadyl-phthalocyanine polycrystalline films for organic field-effect transistors

The organic films of vanadyl-phthalocyanine (VOPc) compounds showed weak epitaxy growth (WEG) behavior on thin ordered para-sexiphenyl (p-6P) layer with high substrate temperature. The WEG of VOPc molecules standing up on the p-6P layer leaded to high in-plane orientation and their layer-by-layer growth behavior. In consequence, high quality VOPc films were obtained, which were consisted of lamellar crystals. Organic field-effect transistors with VOPc/p-6P films as active layers realized high mobility of above 1 cm(2)/V s. This result indicated that nonplanar compounds can obtain a device performance better than planar compounds, therefore, it may provide a rule to find disklike organic semiconductor materials.

1.54 mu m infrared photoluminescence and electroluminescence from an erbium organic compound

Infrared emission at 1.54 mu m excited optically and electrically from an erbium organic compound tris(acetylacetonato)(1,10-phenanthroline) erbium [Er(acac)(3)(phen)] is observed. The rare-earth complex is dispersed into a polymer matrix of poly(N-vinylcarbazole) (PVK) to fabricate an electroluminescent (EL) device with an ITO/PVK:Er(acac)(3)(phen)/Al:Li/Ag structure, where ITO represents indium-tin-oxide-coated glass. The device shows infrared EL emission at 1.54 mu m, which suggests a simple and cheap method to obtain a light source for 1.54-mu m-wavelength devices in optical communications. (C) 2000 American Institute of Physics. [S0021-8979(00)00301-7].