Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices
Data(s) |
2007
|
---|---|
Resumo |
We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang LJ;Liu GJ;Wang HB;Song D;Yu B;Yan DH.Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices,APPLIED PHYSICS LETTERS,2007 ,91(15):文献编号:153508 |
Palavras-Chave | #THIN-FILM TRANSISTORS #FIELD-EFFECT TRANSISTORS #AMORPHOUS-SILICON #CAPACITANCE #DIODES #PERFORMANCE #DIELECTRICS #DEPENDENCE |
Tipo |
期刊论文 |