Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film


Autoria(s): Yang JL; Wang T; Wang HB; Zhu F; Li G; Yan DH
Data(s)

2008

Resumo

The large-size domain and continuous para-sexiphenyl (p-6P) ultrathin film was fabricated successfully on silicon dioxide (SiO2) substrate and investigated by atomic force microscopy and selected area electron diffraction. At the optimal substrate temperature of 180 degrees C, the first-layer film exhibits the mode of layer growth, and the domain size approaches 100 mu m(2). Its saturated island density (0.018 mu m(-2)) is much smaller than that of the second-layer film (0.088 mu m(-2)), which begins to show the Volmer-Weber growth mode.

Identificador

http://ir.ciac.jl.cn/handle/322003/10741

http://www.irgrid.ac.cn/handle/1471x/147613

Idioma(s)

英语

Fonte

Yang JL;Wang T;Wang HB;Zhu F;Li G;Yan DH.Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film,JOURNAL OF PHYSICAL CHEMISTRY B,2008,112(26):7821-7825

Palavras-Chave #WEAK EPITAXY GROWTH #BENT-CORE COMPOUND #PHASE-TRANSITIONS #PHTHALOCYANINE #MONOLAYER #OLIGOMERS #MOBILITY #F16CUPC #SIO2
Tipo

期刊论文