Structure and properties of InAs/AlAs quantum dots for broadband emission
| Data(s) |
2010
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| Resumo |
The InAs quantum dots (QDs) on an AlAs layer are grown on GaAs substrates by molecular beam epitaxy technique. The properties of materials and optics of such QD structures have been investigated by cross sectional transmission electron microscopy and photoluminescence (PL) techniques. It is discovered that the inhomogeneous strain filed mainly exists below InAs QDs layers in the case of no wetting layer. The full width at half maximums (FWHMs) and intensities of PL emission peaks of InAs QDs are found to be closely related to the thickness of the thin AlAs layers. The InAs QDs on an eight monolayer AlAs layer, with wide FWHMs and large integral intensity of PL emission peaks, are favorable for producing broadband QD superluminescent diodes, external-cavity QD laser with large tuning range. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-28T00:52:16Z No. of bitstreams: 1 Structure and properties of InAs-AlAs quantum dots for broadband emission.pdf: 232212 bytes, checksum: 42363ec09ced3f8cc2788560a370516b (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-28T01:00:13Z (GMT) No. of bitstreams: 1 Structure and properties of InAs-AlAs quantum dots for broadband emission.pdf: 232212 bytes, checksum: 42363ec09ced3f8cc2788560a370516b (MD5) Made available in DSpace on 2010-12-28T01:00:13Z (GMT). No. of bitstreams: 1 Structure and properties of InAs-AlAs quantum dots for broadband emission.pdf: 232212 bytes, checksum: 42363ec09ced3f8cc2788560a370516b (MD5) Previous issue date: 2010 This work was supported by the National Natural Science Foundation of China under Grant Nos. 10775106 and 60676036. 国际 This work was supported by the National Natural Science Foundation of China under Grant Nos. 10775106 and 60676036. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Meng XQ (Meng X. Q.), Jin P (Jin P.), Liang ZM (Liang Z. M.), Liu FQ (Liu F. Q.), Wang ZG (Wang Z. G.), Zhang ZY (Zhang Z. Y.).Structure and properties of InAs/AlAs quantum dots for broadband emission.JOURNAL OF APPLIED PHYSICS,2010,108(10):Art. No. 103515 |
| Palavras-Chave | #半导体材料 #CHEMICAL-VAPOR-DEPOSITION |
| Tipo |
期刊论文 |
