Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD

Autoria(s): Tingting Jia; Shengming Zhou; Hao Teng; Hui Lin; Xiaorui Hou; Yukun Li; Wenjie Li; Jun Wang; Jianqi Liu; Jun Huang; Kai Huang; Min Zhang; Jianfeng Wang; Ke Xu
Data(s)

30/03/2011
Identificador

http://ir.siom.ac.cn/handle/181231/7062

http://www.irgrid.ac.cn/handle/1471x/135576
Idioma(s)

中文
Fonte

Tingting Jia,Shengming Zhou,Hao Teng,Hui Lin,Xiaorui Hou,Yukun Li,Wenjie Li,Jun Wang,Jianqi Liu,Jun Huang,Kai Huang,Min Zhang,Jianfeng Wang,Ke Xu.Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD.见:the 16th International Conference on Crystal Growth in conjunction with the 14th International Conference on Vapor Growth and Epitaxy.Beijing;China.2010-8.
Tipo

会议论文
Acesso ao item digital