Heteroepitaxy of cubic GaN: influence of interface structure
Data(s) |
1997
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Resumo |
We report on the epitaxial growth and the microstructure of cubic GaN. The layers are deposited by plasma-assisted molecular beam epitaxy on GaAs and Si substrates. Despite the extreme lattice mismatch between these materials, GaN grows in the metastable cubic phase with a well-defined orientation-relationship to the GaAs substrate including a sharp heteroboundary. The preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice. Royal Microscop Soc.; Inst Phys, Electron Microscopy & Anal Grp.; Mat Res Soc.; Royal Soc.; JEOL UK Ltd.; Oxford Instruments Ltd. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
IOP PUBLISHING LTD TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX |
Fonte |
Trampert A; Brandt O; Yang H; Yang B; Ploog KH .Heteroepitaxy of cubic GaN: influence of interface structure .见:IOP PUBLISHING LTD .MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157),TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX ,1997,205-208 |
Palavras-Chave | #半导体物理 #MOLECULAR-BEAM EPITAXY #GAN/GAAS(001) #GROWTH |
Tipo |
会议论文 |