Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure


Autoria(s): Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.)
Data(s)

2010

Resumo

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

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This work was supported by the A*STAR Singapore-Poland Bilateral Program, SERC Grant No. 0621200015. The authors would like to thank Dr. Sergey Mikhrin of Innolume GmbH for his support and cooperation in epitaxial growth and Dr. Hong-weiQu of Chinese Academy of Sciences for technical support and useful discussion.

国际

This work was supported by the A*STAR Singapore-Poland Bilateral Program, SERC Grant No. 0621200015. The authors would like to thank Dr. Sergey Mikhrin of Innolume GmbH for his support and cooperation in epitaxial growth and Dr. Hong-weiQu of Chinese Academy of Sciences for technical support and useful discussion.

Identificador

http://ir.semi.ac.cn/handle/172111/13930

http://www.irgrid.ac.cn/handle/1471x/105296

Idioma(s)

英语

Fonte

Ding Y (Ding Y.), Fan WJ (Fan W. J.), Ma BS (Ma B. S.), Xu DW (Xu D. W.), Yoon SF (Yoon S. F.), Liang S (Liang S.), Zhao LJ (Zhao L. J.), Wasiak M (Wasiak M.), Czyszanowski T (Czyszanowski T.), Nakwaski W (Nakwaski W.).Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure.JOURNAL OF APPLIED PHYSICS,2010,108(7):Art. No. 073111

Palavras-Chave #半导体材料 #VAPOR-PHASE EPITAXY #PHOTOVOLTAGE SPECTROSCOPY #PHOTOLUMINESCENCE #MODES
Tipo

期刊论文