大气到海洋激光通信信道仿真

详细分析了蓝绿激光穿过大气海洋信道的信道效应和物理特性,利用理论分析和蒙特卡罗模拟方法完成对光信道仿真。介绍了大气海洋激光通信蒙特卡罗模拟方法及计算步骤。研究了不同厚度云层对光束投影面积的展宽,和光脉冲穿过不同深度海水后的空间分布和时域信号波形,讨论了其不同的展宽机理,并对信道的噪声分布进行了分析。发现云层对光脉冲展宽作用在云层厚度500 m时达到饱和,信号能量的随机起伏随海水深度的增加而增大,但能量分布的半峰全宽并不增加,大气海洋的综合信道效应可以用时延滤波器进行建模。

空间激光通信中的分集接收与分集均衡技术

全面对采用空间分集技术和时域Rake接收机分集的带限空间光通信系统的原理进行了模拟和分析，首次在空间激光通信领域提出了综合了分集接收和均衡技术的联合信道均衡器方法，通过计算机仿真分析，研究了不同空间分集方法在非相关空间光开关键控信号下的误比特率，在不同符号间干扰条件下采用rake接收时的误比特率，以及在不同信噪比和不同信道数时采用联合分集均衡的误码率。研究的结果确认联合分集均衡方法能够明显的提高空间光通信系统的性能。

高硅氧发光玻璃的制备及其荧光性能

abstract {Silica glass is an attractive host matrix for the emission ions of rare earth and transition metal ions because it has small thermal expansion coefficient, strong thermal resistance, large fracture strength and good chemical durability and so on. However, a major obstacle to using it as the host matrix is a phenomenon of concentration quenching. In this paper, we introduces a novel method to restrain the concentration quenching by using a porous glass with SiO₂ content > 95% (in mass) and prepare intense fluorescence high-SiO₂ glasses and high-SiO₂ laser glass. The porous glass with high-SiO₂ content was impregnated with rare-earth and transition metal ions, and consequently sintered into a compact non-porous glass in reduction or oxidization atmospheres. Various intense fluorescence glasses with high emission yields, a vacuum ultraviolet-excited intensely luminescent glass, high silica glass containing high concentration of Er³⁺ ion, ultrabroad infrared luminescent Bi-doped high silica glass and Nd³⁺-doped silica microchip laser glass were obtained by this method. The porous glass is also favorable for co-impregnating multi-active-ions. It can bring effective energy transferring between various active ions in the glass and increases luminescent intensity and extend range of excitation spectrum. The luminescent active ions-doped high-SiO₂ glasses are potential host materials for high power solid-state lasers and new transparent fluorescence materials.}

Nd：YAG激光器光栅式扫描预处理的计算模拟与优化分析

采用计算模拟的方法．研究了光栅式扫描预处理的扫描方式以及脉冲能量波动、定位误差对预处理效率的影响。研究发现。脉冲能量波动及其定位误差使预处理效率降低，同时其影响与扫描方式之间存在相互调制作用．因此可以通过选择合适的扫描方式以及扫描间隔来优化预处理流程，提高预处理效率。此外发现，光斑呈等边三角形排列时的预处理效率优于正方形。

纳米孔结构金属多孔材料研究进展

纳米孔结构金属多孔材料(以下简称金属纳米多孔材料)是近年来纳米技术及多孔材料科学领域引人注目的研究对象。本文综述了近年来金属纳米多孔材料的制备方法(粉末烧结法、脱合金法、胶晶模板法、斜入射沉积法等)、表征技术、应用现状以及最新的研究成果。指出了金属纳米多孔材料研究进程中存在的主要问题、发展前景及今后的研究方向。

The influence of internal electric fields on the transition energy of InGaN/gaN quantum well

We present a new way to meet the amount of strain relaxation in an InGaN quantum well layer grown on relaxed GaN by calculating and measuring its internal field. With perturbation theory, we also calculate the transition energy of InGaN/GaN SQWs as affected by internal fields. The newly reported experimental data by Graham et al. fit our calculations well on the assumption that the InGaN well layer suffered a 20% strain relaxation, we discuss the differences between our calculated results and the experimental data. Our calculation suggests that with the increase of indium mole fraction in the InGaN/GaN quantum well, the effect of polarization fields on the luminescence of the quantum well will increase. Moreover, our calculation also suggests that an increase in the quantum well width by only one monolayer can result in a large reduction in the transition energy. (c) 2006 Elsevier B.V. All rights reserved.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

A geometrical model of GaN morphology in initial growth stage

Based on morphology observed by atomic force microscopy, a geometrical model was proposed in order to explain the statistical results obtained from morphology observation on GaN in initial growth stage. Four parameters were introduced to describe the morphology characteristics in this model. Least-square fitting of height distribution was performed. The height distribution derived from the model agreed well with that obtained from experimental records. It was also found that the model should be further advanced to understand the growth of GaN in initial growth stage. (C) 2002 Elsevier Science BY. All rights reserved.

Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

A quasi-thermodynamic model of metalorganic vapor phase epitaxy (MOVPE) growth of GaxAlyIn1-x-yN alloys has been proposed. In view of the complex growth behavior of GaxAlyIn1-x-yN, we focus our attention on the galliumrich quaternary alloys that are lattice matched to GaN, In0.15Ga0.85N or Al0.15Ga0.85N, which are widely used in the GaN-based optoelectronic devices. The relationship between GaAlInN alloy composition and input molar ratio of group III metalorganic compounds at various growth conditions has been calculated. The influence of growth temperature, nitrogen fraction in the carrier gas, input partial pressure of group III metalorganics, reactor pressure, V/III ratio and the decomposition rate of ammonia on the composition of deposited alloys are studied systematically. Based on these calculated results, we can find out the appropriate growth conditions for the MOVPE growth of GaxAlyIn1-x-yN alloy lattice matched to GaN, In0.15Ga0.85N or Al0.15Ga0.85N. (C) 2002 Elsevier Science B.V. All rights reserved.

Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well

The band structures of wurtzite ZnO are calculated using the empirical pseudopotential method (EPM). The 8 parameters of the Zn and O atom pesudopotential form factors with Schluter's formula are obtained. The effective mass parameters are extracted by using k.p Hamiltonian to fit the EPM results. The calculated band edge energies (E-g, E-A, E-B, and E-C) at Gamma point are in good agreement with experimental results. The ordering of ZnO at the top of valence band is found to be A(Gamma(7))-B(Gamma(9))-C(Gamma(7)) due to a negative spin-orbit (SO) splitting. Based on the band parameters obtained, the valence hole subbands of wurzite ZnO/MgxZn1-xO tensile-strained quantum wells (QWs) with different well widths and Mg compositions are calculated using 6-band k.p method. (c) 2005 Elsevier B.V. All rights reserved.

Phase reconstruction from three interferograms based on integral of phase gradient

A novel algorithm of phase reconstruction based on the integral of phase gradient is presented. The algorithm directly derives two real-valued partial derivatives from three phase-shifted interferograms. Through integrating the phase derivatives, the desired phase is reconstructed. During the phase reconstruction process, there is no need for an extra rewrapping manipulation to ensure values of the phase derivatives lie in the interval [-pi, pi] as before, thus this algorithm can prevent error or distortion brought about by the phase unwrapping operation. Additionally, this algorithm is fast and easy to implement, and insensitive to the nonuniformity of the intensity distribution of the interferogram. The feasibility of the algorithm is demonstrated by both computer simulation and experiment.

数控光学成形的计算机模拟及工艺实验

本文详细地介绍了以控制磨头驻留时间为基础的CCOS的基本原理、实现方法以及计算机模拟软件和工艺实验。在基本原理的基础上，着重研究解决了CCOS计算机模拟当中的两个关键问题“边缘效应”和计算效率的提高。首先，在分析计算磨头工作函数在边缘区域的变化以及边缘区域材料去除量变化规律的基础上，得到磨头在边缘区域驻留时间函数的修正函数。其次，对原有的模拟计算算法进行了改进，改进后算法的计算速度比原来快了十几倍从而大大提高了加工及检测的效率。另外还进行了CCOS的工艺实验研究，确定了CCOS抛光阶段的加工效率约为6×10~(-4)mm~3/sec为预计绝对加工时间提供了依据。

ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION

20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) and Ge0.5Si0.5 (5 nm)/Si(25 nm) were studied by double-crystal X-ray diffraction. The Ge content x was determined by computer simulation of the diffraction features from the superlattice. This method is shown to be independent of the relaxation of the superlattice. Alternatively, x can be obtained from the measured difference DELTAa/a in lattice spacing perpendicular to the growth plane. It is sensitive to the relaxation. Comparing the results obtained in these two different ways, information about the relaxation of the superlattices can be obtained.

THE DEPENDENCE OF THE INVERSION LAYER THICKNESS ON THE FILM THICKNESS IN THIN-FILM SOI STRUCTURES

The dependence of the inversion-layer thickness on the film thickness in thin-film SOI structure is analyzed theoretically by using computer simulation. A new concept and parameter, the critical thickness of thin film all-bulk inversion, is introduced for the design of thin-film MOS/SOI devices. It is necessary to select the film thickness T(s1) close to the all-bulk strong inversion critical thickness in order to get high-speed and high-power operation of ultra-thin film MOS/SOI devices.

A COMMON-CAVITY 2-SECTION INGAASP/INP BISTABLE LASER WITH A LOW OPTICAL SWITCHING POWER

The characteristics of the steady-state and the transient response to external light excitation of a common-cavity two-section (CCTS) bistable semiconductor laser is investigated. The results on the relation of light output versus light input, the wavelength match, optical amplification and optical switching are presented. Experimental results are compared to the results of a computer simulation.