Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
Data(s) |
2003
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Resumo |
Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG .Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth ,MICROELECTRONIC ENGINEERING,2003,66 (1-4):504-509 |
Palavras-Chave | #半导体物理 #Czochralski method #growth from melt #semiconductor silicon #argon gas flow #computer simulation #oxygen content #FURNACE PRESSURE |
Tipo |
期刊论文 |