Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well


Autoria(s): Fan WJ; Abiyasa AP; Tan ST; Yu SF; Sun XW; Xia JB; Yeo YC; Li MF; Chong TC
Data(s)

2006

Resumo

The band structures of wurtzite ZnO are calculated using the empirical pseudopotential method (EPM). The 8 parameters of the Zn and O atom pesudopotential form factors with Schluter's formula are obtained. The effective mass parameters are extracted by using k.p Hamiltonian to fit the EPM results. The calculated band edge energies (E-g, E-A, E-B, and E-C) at Gamma point are in good agreement with experimental results. The ordering of ZnO at the top of valence band is found to be A(Gamma(7))-B(Gamma(9))-C(Gamma(7)) due to a negative spin-orbit (SO) splitting. Based on the band parameters obtained, the valence hole subbands of wurzite ZnO/MgxZn1-xO tensile-strained quantum wells (QWs) with different well widths and Mg compositions are calculated using 6-band k.p method. (c) 2005 Elsevier B.V. All rights reserved.

The band structures of wurtzite ZnO are calculated using the empirical pseudopotential method (EPM). The 8 parameters of the Zn and O atom pesudopotential form factors with Schluter's formula are obtained. The effective mass parameters are extracted by using k.p Hamiltonian to fit the EPM results. The calculated band edge energies (E-g, E-A, E-B, and E-C) at Gamma point are in good agreement with experimental results. The ordering of ZnO at the top of valence band is found to be A(Gamma(7))-B(Gamma(9))-C(Gamma(7)) due to a negative spin-orbit (SO) splitting. Based on the band parameters obtained, the valence hole subbands of wurzite ZnO/MgxZn1-xO tensile-strained quantum wells (QWs) with different well widths and Mg compositions are calculated using 6-band k.p method. (c) 2005 Elsevier B.V. All rights reserved.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

Int Union Mat Res Soc.; Mat Res Soc Singapore.; Suntec Int Convent & Exhibit Ctr.

Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore; Chinese Acad Sci, Inst Semicond, Beijing 10083, Peoples R China; Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

Int Union Mat Res Soc.; Mat Res Soc Singapore.; Suntec Int Convent & Exhibit Ctr.

Identificador

http://ir.semi.ac.cn/handle/172111/10050

http://www.irgrid.ac.cn/handle/1471x/66026

Idioma(s)

英语

Publicador

ELSEVIER SCIENCE BV

PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS

Fonte

Fan, WJ; Abiyasa, AP; Tan, ST; Yu, SF; Sun, XW; Xia, JB; Yeo, YC; Li, MF; Chong, TC .Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,JAN 18 2006,287 (1): 28-33

Palavras-Chave #半导体物理 #computer simulation
Tipo

会议论文