Solid-state qubit measurement with single electron transistors

In this paper we consider the continuous weak measurement of a solid-state qubit by single electron transistors (SET). For single-dot SET, we find that in nonlinear response regime the signal-to-noise ratio can violate the universal upper bound imposed quantum mechanically on any linear response detectors. We understand the violation by means of the cross-correlation of the detector currents. For double-dot SET, we discuss its robustness against wider range of temperatures, quantum efficiency, and the relevant open issues unresolved.

High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)

A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.

Quantum well infrared photodetector simultaneously working in two atmospheric windows

We have demonstrated a two-contact quantum well infrared photodetector (QWIP) exhibiting simultaneous photoresponse in both the mid- and the long-wavelength atmospheric windows of 3-5 mu m and of 8-12 mu m. The structure of the device was achieved by sequentially growing a mid-wavelength QWIP part followed by a long-wavelength QWIP part separated by an n-doped layer. Compared with the conventional dual-band QWIP device utilizing three ohmic contacts, our QWIP is promising to greatly facilitate two-color focal plane array (FPA) fabrication by reducing the number of the indium bumps per pixel from three to one just like a monochromatic FPA fabrication and to increase the FPA fill factor by reducing one contact per pixel; another advantage may be that this QWIP FPA boasts broadband detection capability in the two atmospheric windows while using only a monochromatic readout integrated circuit. We attributed this simultaneous broadband detection to the different distributions of the total bias voltage between the mid- and long-wavelength QWIP parts.

A Photovoltaic InAs Quantum-Dot Infrared Photodetector

A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AlGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78 K, a clear spectral response in the range of 2 -7 mu m has been obtained with peaks at 3.1, 4.8 and 5.7 mu m. The bandgap energies of GaAs and Al0.2Ga0.8As at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110 K, which is state-of-the-art for photovoltaic QDIP. The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure.

纳米／微米结构氧化物材料的水热合成、形貌与发光性质研究

采用水热法结合后续热处理制备了一系列纯的和稀土离子（Eu3＋，Dy3＋）掺杂的黔具有纳米／微米结构的无机氧化物材料，包括YB03、姚03、Ga203和硅基MCM一攀41介孔分子筛体系。研究了这些体系的水热产物的晶体形貌、结构以及它们的生乖～一＿长机理，并通过进一步热处理得到了保持水热产物纳米／微米结构形貌的发光材料，报道了以上各个体系材料的光致发光性能。一把姚03和Eu203粉末直接加入H3Bo3水溶液中，调节pH一1一4，在180一270夸＿少℃水热处理得到了具有vaterite结构的YBo3：Eu3＋晶体。xRD和FEsEM结果证明一扭03：E矿"晶体是由厚度小于50nm的纳米晶片构成的花状和猴头菇状的微米级晶丫体。水热温度提高时纳米晶片的厚度没有增加，形貌也不变，但是结晶度和发光一强度有所提高。pH值对纳米晶片之间的距离、角度和晶片数量有影响。pH低时，纳米晶片更多且包裹得更紧，形成了猴头菇状；而pH高时，晶片分得更开一些呈花朵状。这与pH值低时结晶成核较快较多有关。YB03：E矿＋水热和固相法样品在24Onm激发下的发光谱峰位相同。但水热样品比固相法样品具有较高的红橙比［Eu3＋：I（，D。一7F2）／I（SD。一7FI）］，增加了12一37％。在24oC下制备的花03：Eu3＋水热样品具有最大的结晶度和发光强度。报道了三种晶形调节剂对水热晶体形貌的影响结果。硝酸钻水溶液用氨水调节至pH一8一n，200oC下水热处理24小时，产物经xRD确定是单斜晶系的碱式硝酸盐叽O（0H）9困03）。FEsEM观察发现产物是一种具有几＿三叶形截面的棱柱。改变合成条件可以调节三叶形棱柱的尺寸。增加氨水量时，PH从8调到n后，棱柱直径可从微米级调节到亚微米级，即从3一5林m左右下降到200一300纳米，同时长径比也有所增加，从pH一8的5增加到pH＝n的10。调节机制可解释为较高的pH条件下结晶成核作用进行较快，形成了更多的晶核。三叶形棱柱的生长机理是、O（OH）9困03）的晶核依靠内在的趋势长成棒状纳米粒子；并通过一种直接的聚集生长，这些起始的纳米棒沿着它们横截面的径向方向快速自堆积成一种Y型结构的棒束；然后沿着棱柱轴向和平行于棱柱叶片方向的晶面同时优先生长，而垂直于叶片方向上的晶面生长得相对缓慢，导致三叶形棱I、－纳米／微米结构氧化物材料的水热合成、形貌与发光性质研究柱的形成。、经过高温相转变得到了姚03三叶形棱柱。采用同样方法可以制得姚03：E矿＋的三叶形棱柱发光粉，其光谱与固相法样品的一致。将Gacl3一HZO一NaOH体系在pH＝6一8时于180℃下水热处理得到了正交晶系的Gao0H晶体，其形貌分别是宽度在200一30Onm之间长径比约1：7的四方棱柱（pH＝6）和长径比约1：3纺锤状的纳米棒束（pH＝8）。使用HZO／DEG混合溶剂可以增加棱柱的长径比，1：Ivol时增加到1：15；1：Zvol时获得的是长达几十微米的四方棱柱纳米线6Go0OH纳米棒是从最初的胶状沉淀中成核后沿着c轴优先生长而成的。pH值的高低可导致Ga0OH晶体从四方棱柱到纳米棒束的不同形貌。DEG的存在对晶体的生长可能有两点作用：一是抑制晶核形成；二是降低晶体沿着横截面晶面的生长速度。经过高温锻烧的产物是保持着前驱体形貌的p一GaZO3晶体。254nm激发下p一GaZO3纳米棒的发射谱是从300nm到600nln的宽峰，最大值在455nln。发光的平均寿命是64ns。其蓝光发射起源于氧空位给体提供的电子和来自受体嫁空位或者嫁氧空位对的空穴之间的复合。采用相似方法制备了p一GaZO3：Dy纳米棒束，并与固相法样品对比了光谱性质的异同。将三种5102基材料：MCM一41型分子筛（直接分子筛CMS和萃取分子筛EMS）、无规颗粒（ASP）和干凝胶（SG）进行从室温到1000℃的不同温度不同时间热处理。254nm激发下，MCM一41没有发光现象。而ASP和SG系列样品随着热处理温度不同而显示不同的PL。说明ASP和SG与MCM一41有着不同的发光机理。排除了ASP和SG样品的发光中心是来自5102网络本身的结构缺陷，认为是其中所含有机物在热处理中产生的碳杂质引起。结果也表明MCM41中模板剂在热处理的碳化产物并没有引起MCM一41的PL。在365nm激发下，MCM一41与ASP、SG的PL现象大致相同。表明所有系列的样品的发光机理相同。CMS和EMS两个系列在300℃以上处理的样品的PL相似，说明模板剂的存在及其碳化并没有影响MCM一41的PL。所有系列样品在365nm激发下的PL认为是起源于5102网络中与氧相关的结构缺陷三Si一0．，而不是碳掺杂作用引起的。

Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.

Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice

We have grown a high-quality 20 period InGaAs/GaAs quantum dot superlattice with a standard structure typically used for quantum well infrared photodetector. Normal incident absorption was observed around 13-15 mu m. Potential applications for this work include high-performance quantum dot infrared detectors.

Intraband optical absorption in semiconductor coupled quantum dots

In the framework of effective mass envelope function theory, absorption coefficients are calculated for intraband (intersubband in the conduction band) optical transition in InAs/GaAs coupled quantum dots. In our calculation the microscpic distributon of the strain is taken into account. The absorption in coupled quantum dots is quite different from that of superlattices. In superlattices, the absorption does not exist when the electric vector of light is parallel to the superlattice plane (perpendicular incident). This introduces somewhat of a difficulty in fabricating the infrared detector. In quantum dots, the absorption exists when light incident along any direction, which may be good for fabricating infrared detectors.

Two-dimensional excitonic emission in InAs submonolayers

Photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to study optical emissions of ultrathin InAs layers with average layer thickness ranging from 1/12 to 1 ML grown on GaAs substrates. We have found that the inhomogeneous broadening of the PL from InAs layers can be well described by the quantum-well model with InAs islands coupling to each other and being regarded as a quasiwell. From the temperature dependence of the exciton linewidth, the exciton-LO-phonon scattering coefficient was found to be comparable to that in conventional two-dimensional quantum wells. In the TRPL measurements, the PL decay time increases linearly with temperature, which is a typical characteristic of free excitons in quantum wells. All these results indicate that the excitons localized in InAs exhibit two-dimensional properties of quantum wells, despite the topographical islandlike structure.

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc-blende GaN/Ga0.85Al0.15N strained quantum well (100 Angstrom well width) have been investigated using a 6 X 6 Hamiltonian model including the heavy hole, Light hole, and spin-orbit split-off bands. At the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin-orbit split-off hole. Optical transitions between the valence subbands and the conduction subbands obey the Delta n=0 selection rule. At the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. The optical transitions do not obey the Delta n=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 10(19) cm(-3), there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5 X 10(18) cm(-3), which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J(rad) is 0.53 kA/cm(2) for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors. (C) 1996 American Institute of Physics.

Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice

The authors report for the first time, normal incident infrared absorption around the wavelength of 13-15 mu m from a 20 period InGaAs/GaAs quantum dot supperlatice (QDS). The structure of a QDS has been-confirmed by cross-section transmission electron microscopy (TEM) and by a photoluminescence spectrum (PL). This opens the way to high performance 8-14 mu m quantum dot infrared detectors.

Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations

Neutron induced defect levels in high resistivity silicon detectors have been studied using a current-based macroscopic defect analysis system: thermally stimulated current (TSC) and current deep level transient spectroscopy (I-DLTS). These studies have been correlated to the traditional C-V, I-V, and transient current and charge techniques (TCT/TChT) after neutron radiation and subsequent thermal anneals. It has been found that the increases of the space charge density, N-eff, in irradiated detectors after thermal anneals (N-eff reverse anneal) correspond to the increases of deep levels in the silicon bandgap. In particular, increases of the double vacancy center (V-V and V-V-- -) and/or C-i-O-i level have good correlations with the N-eff reverse anneal. It has also been observed that the leakage current of highly irradiated (Phi(n) > 10(13) n/cm(2)) detectors increases after thermal anneals, which is different from the leakage current annealing behavior of slightly irradiated (Phi(n) < 10(13) n/cm(2)) detectors. It is apparent that V-V center and/or C-i-O-i level play important roles in both N-eff and leakage current degradations for highly irradiated high resistivity silicon detectors.

Long period grating for 3-5 mu m quantum-well infra-red photodetectors

By considering all possible high order diffracted waves, the authors calculate the coupling efficiency of long period gratings for 3-5 mu m quantum-well infra-red photodetectors (QWIPs) on the basis of the modal expansion model (MEM). A large coupling efficiency for 3-5 mu m QWIPs has been demonstrated. This greatly reduces the difficulties in fabricating 3-5 mu m grating coupled QWIPs and opens the way to fabricate high performance 3-5 mu m and two colour QWIPs image arrays.

VLSI architecture of a K-best detector for MIMO--OFDM wireless communication systems

The K-best detector is considered as a promising technique in the MIMO-OFDM detection because of its good performance and low complexity. In this paper, a new K-best VLSI architecture is presented. In the proposed architecture, the metric computation units (MCUs) expand each surviving path only to its partial branches, based on the novel expansion scheme, which can predetermine the branches' ascending order by their local distances. Then a distributed sorter sorts out the new K surviving paths from the expanded branches in pipelines. Compared to the conventional K-best scheme, the proposed architecture can approximately reduce fundamental operations by 50% and 75% for the 16-QAM and the 64-QAM cases, respectively, and, consequently, lower the demand on the hardware resource significantly. Simulation results prove that the proposed architecture can achieve a performance very similar to conventional K-best detectors. Hence, it is an efficient solution to the K-best detector's VLSI implementation for high-throughput MIMO-OFDM systems.