High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
| Data(s) |
2007
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| Resumo |
A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim. A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim. zhangdi于2010-03-29批量导入 Made available in DSpace on 2010-03-29T06:06:04Z (GMT). No. of bitstreams: 1 2234.pdf: 234938 bytes, checksum: 9a6835cc302d46ae2a809b92db9fc924 (MD5) Previous issue date: 2007 Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
WILEY-V C H VERLAG GMBH PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY |
| Fonte |
Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) .High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) .见：WILEY-V C H VERLAG GMBH .Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS ,PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY ,2007,Vol 4 No 5 4 (5): 1613-1616 |
| Palavras-Chave | #半导体材料 #BUFFER LAYER #STRESS #PHOTODIODES #REDUCTION #DETECTORS #SAPPHIRE #EPITAXY #GROWTH |
| Tipo |
会议论文 |
