A Photovoltaic InAs Quantum-Dot Infrared Photodetector
| Data(s) |
2010
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| Resumo |
A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AlGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78 K, a clear spectral response in the range of 2 -7 mu m has been obtained with peaks at 3.1, 4.8 and 5.7 mu m. The bandgap energies of GaAs and Al0.2Ga0.8As at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110 K, which is state-of-the-art for photovoltaic QDIP. The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28T13:44:59Z No. of bitstreams: 1 A Photovoltaic InAs Quantum-Dot Infrared Photodetector.pdf: 515015 bytes, checksum: 3d2632fa0dcbc50d86954c7368be3e97 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-28T13:50:22Z (GMT) No. of bitstreams: 1 A Photovoltaic InAs Quantum-Dot Infrared Photodetector.pdf: 515015 bytes, checksum: 3d2632fa0dcbc50d86954c7368be3e97 (MD5) Made available in DSpace on 2010-04-28T13:50:22Z (GMT). No. of bitstreams: 1 A Photovoltaic InAs Quantum-Dot Infrared Photodetector.pdf: 515015 bytes, checksum: 3d2632fa0dcbc50d86954c7368be3e97 (MD5) Previous issue date: 2010 National Natural Science Foundation of China 60990315 60676029 National Basic Research Program 2006CB604904 其它 National Natural Science Foundation of China 60990315 60676029 National Basic Research Program 2006CB604904 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Tang GH (Tang Guang-Hua), Xu B (Xu Bo), Jiang, LW (Jiang Li-Wen), Kong JX (Kong Jin-Xia), Kong, N (Kong Ning), Liang DC (Liang De-Chun), Liang P (Liang Ping), Ye XL (Ye Xiao-Ling), Jin P (Jin Peng), Liu FQ (Liu Feng-Qi), Chen YH (Chen Yong-Hai), Wang ZG (Wang Zhan-Guo) .A Photovoltaic InAs Quantum-Dot Infrared Photodetector.CHINESE PHYSICS LETTERS,2010,27(4):Art. No. 047801 |
| Palavras-Chave | #半导体器件 #MU-M #TEMPERATURE #DETECTORS #OPERATION |
| Tipo |
期刊论文 |
