Solid-state qubit measurement with single electron transistors


Autoria(s): Jiao, HJ; Li, F; Wang, SK; Li, XQ
Data(s)

2008

Resumo

In this paper we consider the continuous weak measurement of a solid-state qubit by single electron transistors (SET). For single-dot SET, we find that in nonlinear response regime the signal-to-noise ratio can violate the universal upper bound imposed quantum mechanically on any linear response detectors. We understand the violation by means of the cross-correlation of the detector currents. For double-dot SET, we discuss its robustness against wider range of temperatures, quantum efficiency, and the relevant open issues unresolved.

In this paper we consider the continuous weak measurement of a solid-state qubit by single electron transistors (SET). For single-dot SET, we find that in nonlinear response regime the signal-to-noise ratio can violate the universal upper bound imposed quantum mechanically on any linear response detectors. We understand the violation by means of the cross-correlation of the detector currents. For double-dot SET, we discuss its robustness against wider range of temperatures, quantum efficiency, and the relevant open issues unresolved.

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Natl Sci Council.; Natl Ctr Theoret Sci S.; Natl Ctr Theoret Sci N.; Acad Sinica, Res Ctr Appl Sci.; Natl Cheng Kung Univ.; Ctr Theoret Sci.; Natl Taiwan Univ, Dept Phys.; Natl Taiwan Univ, Coll Sci.

[Jiao, HuJun; Li, Feng; Li, Xin-Qi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

Natl Sci Council.; Natl Ctr Theoret Sci S.; Natl Ctr Theoret Sci N.; Acad Sinica, Res Ctr Appl Sci.; Natl Cheng Kung Univ.; Ctr Theoret Sci.; Natl Taiwan Univ, Dept Phys.; Natl Taiwan Univ, Coll Sci.

Identificador

http://ir.semi.ac.cn/handle/172111/8358

http://www.irgrid.ac.cn/handle/1471x/65878

Idioma(s)

英语

Publicador

AMER INST PHYSICS

2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA

Fonte

Jiao, HJ;Li, F;Wang, SK;Li, XQ.Solid-state qubit measurement with single electron transistors .见:AMER INST PHYSICS .SOLID-STATE QUANTUM COMPUTING,2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA ,2008,PROCEEDINGS,1074,: 86-91

Palavras-Chave #半导体物理 #solid-state qubit #single-electron-transistor #quantum measurement #number-resolved master equation
Tipo

会议论文