Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-28T00:34:28Z No. of bitstreams: 1 Molecular beam epitaxy of GaSb on GaAs substrates with AlSb-GaSb compound buffer layers.pdf: 810047 bytes, checksum: ae976c06e0fe32c8911387e5b9adae6a (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-28T00:59:37Z (GMT) No. of bitstreams: 1 Molecular beam epitaxy of GaSb on GaAs substrates with AlSb-GaSb compound buffer layers.pdf: 810047 bytes, checksum: ae976c06e0fe32c8911387e5b9adae6a (MD5)

Made available in DSpace on 2010-12-28T00:59:37Z (GMT). No. of bitstreams: 1 Molecular beam epitaxy of GaSb on GaAs substrates with AlSb-GaSb compound buffer layers.pdf: 810047 bytes, checksum: ae976c06e0fe32c8911387e5b9adae6a (MD5) Previous issue date: 2010

This work is supported by the National Natural Science Foundation of China (Grant Nos.: 60607016, 60625405), the National Basic Research Program of China (Grant No.: 2007CB936304) and the Natural Science Foundation of Yunnan Province (Grant Nos.: 2009CD045 2007E197M).

其它

This work is supported by the National Natural Science Foundation of China (Grant Nos.: 60607016, 60625405), the National Basic Research Program of China (Grant No.: 2007CB936304) and the Natural Science Foundation of Yunnan Province (Grant Nos.: 2009CD045 2007E197M).