Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice
| Data(s) |
1997
|
|---|---|
| Resumo |
We have grown a high-quality 20 period InGaAs/GaAs quantum dot superlattice with a standard structure typically used for quantum well infrared photodetector. Normal incident absorption was observed around 13-15 mu m. Potential applications for this work include high-performance quantum dot infrared detectors. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Pan D; Zeng YP; Li JM; Zhang CH; Kong MY; Wang HM; Wang CY; Wu J .Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice ,JOURNAL OF CRYSTAL GROWTH,1997,175(0):760-764 |
| Palavras-Chave | #半导体材料 #quantum dot #intersubband absorption #quantum dot infrared photodetector #WELL INFRARED PHOTODETECTORS #PHONON-SCATTERING #LUMINESCENCE #GAAS(100) |
| Tipo |
期刊论文 |
