Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice
| Data(s) |
1996
|
|---|---|
| Resumo |
The authors report for the first time, normal incident infrared absorption around the wavelength of 13-15 mu m from a 20 period InGaAs/GaAs quantum dot supperlatice (QDS). The structure of a QDS has been-confirmed by cross-section transmission electron microscopy (TEM) and by a photoluminescence spectrum (PL). This opens the way to high performance 8-14 mu m quantum dot infrared detectors. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Pan D; Zeng YP; Kong MY; Wu J; Zhu YQ; Zhang CH; Li JM; Wang CY .Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice ,ELECTRONICS LETTERS,1996,32(18):1726-1727 |
| Palavras-Chave | #半导体材料 #infrared detectors #semiconductor quantum dots #semiconductor superlattices |
| Tipo |
期刊论文 |
