掺镨GaN薄膜的微结构与光致发光

利用背散射／沟道（RBS／C）技术、原子力显微镜（AFM）和光致发光（PL）谱研究了掺镨GaN薄膜的微结构和可见光发光特性。RBS／C结果表明，注入Pr后，在注入层引入了晶格损伤；注入样品经1050℃退火后，部分损伤得到恢复，但是晶体质量没有恢复到注入前的状态。AFM结果表明，注入Pr后，表面凹凸不平，而且在注入区引起了膨胀，膨胀幅度达到23．368nm左右。PL结果表明，在850—1050℃退火，发光强度按e指数增加；当退火温度达到1050℃，发光强度最强，经过数据拟合可得Pr^3＋的热激活能为5．8eV。

带胶剥离工艺粘附性实验研究

带胶剥离是微电子工艺的常见工艺步骤.文章通过对带胶剥离的样品进行退火实验,研究了电极蒸发金属和不同基底的粘附特性.实验表明,带胶剥离工艺制备的电极,其金属与衬底的粘附性差,退火过程产生气泡,严重影响了器件的特性.蒸发温度、蒸发室真空度,以及基片表面的清洁度与气泡产生有密切的关系.从这几点入手,提出了相应的改进方法.

SOI集成电路的ESD保护技术研究进展

近年来,随着SOI技术的快速发展,SOI集成电路的ESD保护已成为一个主要的可靠性设计问题.介绍了SOI ESD保护器件方面的最新进展,阐述了在SOI ESD保护器件设计和优化中出现的新问题,并进行了详细的讨论.

手动跟踪方阵面上辐照度及曝辐量计算公式的推导

推导出了方位角手动跟踪和极轴时角手动跟踪方阵面上曝辐量及辐照度的计算公式。根据二连浩特实测的日射资料，计算了不同手动跟踪方阵面上各月的曝辐量，比较了不同跟踪方式下太阳电池方阵各月接受的曝辐量。

用改进的调制光电流相 称分析技术研究氢人非晶硅的隙态分布

提出了一种严格校准调制光电流相移的方法,在此基础上,采用调制光电流相移分析技术研究了不掺杂氢化非晶硅(a-Si:H)薄膜费米能级以上隙态密度及其分布的光致变化效应。实验发现，光电流相移的校准对确定隙态密度及其分布是至关重要的。除了校准测试系统的相移频率特性外，还需考虑样品本射电阻、电容等参数的影响，否则会使隙态密度偏低1-2个数量级，经严格校准的光电流相移测试，a-Si:H的隙态分布在导带边以下约0.43eV处观察到一个峰，可能是双占据悬挂键D~-中心引起的。光照引起浅态减小，深态增加，引起了隙态重新分布。

MBE GaAs/GaP（001）异质外延层结构参数的X射线双晶衍射研究

于2010-11-23批量导入

Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix

Structural dependence on annealing of a-SiOx:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513-519cm(-1) after 1170 degreesC annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980cm(-1) of Si-O-Si stretching vibration at 1085cm(-1) in infrared spectra imply that except that SiO2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesC. This sub-oxide phase is located at the interface between Si crystallites and SiO2, and thus support the shell model for the mixed structures of Si grains and SiO2 matrix.

The role of hydrogen in semi-insulating INP

Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimer and other infrared absorption lines, tentatively be assigned to hydrogen related defects were investigated by FTIR. Hydrogen cam passivate imperfections, thereby eliminating detrimental electronic states from the energy bandgap. Incorporated hydrogen can introduce extended defects and generate electrically-active defects. Hydrogen also can acts as an actuator for creating of antistructure defects. Isolated hydrogen related defects(e.. H-2*) may play an important role in the conversion of the annealed wafers from semiconducting to the semi-insulating behavior. H-2* may be a deep donor, whose energy level is very near the iron deep acceptor level in the energy gap.