Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix


Autoria(s): Ma ZX; Liao XB; Zheng WM; Yu J; Chu JH
Data(s)

2000

Resumo

Structural dependence on annealing of a-SiOx:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513-519cm(-1) after 1170 degreesC annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980cm(-1) of Si-O-Si stretching vibration at 1085cm(-1) in infrared spectra imply that except that SiO2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesC. This sub-oxide phase is located at the interface between Si crystallites and SiO2, and thus support the shell model for the mixed structures of Si grains and SiO2 matrix.

Structural dependence on annealing of a-SiOx:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513-519cm(-1) after 1170 degreesC annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980cm(-1) of Si-O-Si stretching vibration at 1085cm(-1) in infrared spectra imply that except that SiO2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesC. This sub-oxide phase is located at the interface between Si crystallites and SiO2, and thus support the shell model for the mixed structures of Si grains and SiO2 matrix.

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Chinese Phys Soc.; Shanghai Phys Soc.; Natl Lab Infrared Phys.; Acad Sinica, Shanghai Inst Tech Phys.; Natl Nat Sci Fdn China.; SPIE.; Abdus Salam Int Ctr Theoret Phys.; Satis Vacuum Ind Vertriebs AG.

Chinese Acad Sci, Inst Semicond, Ctr Fis Mat Condensada, State Key Lab Surface Phys, Beijing 100083, Peoples R China

Chinese Phys Soc.; Shanghai Phys Soc.; Natl Lab Infrared Phys.; Acad Sinica, Shanghai Inst Tech Phys.; Natl Nat Sci Fdn China.; SPIE.; Abdus Salam Int Ctr Theoret Phys.; Satis Vacuum Ind Vertriebs AG.

Identificador

http://ir.semi.ac.cn/handle/172111/13713

http://www.irgrid.ac.cn/handle/1471x/105038

Idioma(s)

英语

Publicador

SPIE-INT SOC OPTICAL ENGINEERING

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Fonte

Ma ZX; Liao XB; Zheng WM; Yu J; Chu JH .Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix .见:SPIE-INT SOC OPTICAL ENGINEERING .FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2000,258-261

Palavras-Chave #半导体材料 #nanocrystalline silicon #Raman scattering #infrared absorption #phonon confinement #MICROCRYSTALLINE SILICON #POLYCRYSTALLINE SILICON #FILMS
Tipo

会议论文