MEMS结构残余变形的SEM电镜云纹法实验研究

<正>微电子机械系统(MEMS)是集机械电子元件为一体具有传感、动作、控制操纵功能的集成系统。其结构由多层薄膜构成。它的制作工艺与宏观构件不同,是由薄膜刻蚀而制得的。制作过程中就可能形成残余应力。在去除牺牲层过程中残余应力释放而使得构件形状尺寸发生变化。实验结果表明,过大的残余应力致使MEMS构件发生翘曲破坏。由此可见,研究MEMS构件的残余应力是其设计中相当重要的问题。残余应力一般是通过残余变形即残余应变的量测而间接获得,因此,如何测量残余应变是十分重要问题。

Instability Analysis Of Torsional Mems/Nems Actuators Under Capillary Force

The static and dynamic instabilities of a torsional MEMS/NEMS actuator caused by capillary effects are studied, respectively. An instability number, eta, is defined, and the critical gap distance, g(cr), between the mainplate and the substrate is derived. According to the values of eta and g, the instability criteria of the actuator are presented. The dimensionless motion equation of the MEMS/NEMS torsional actuator is derived when it makes nonlinear oscillation under capillary force. The qualitative analysis of the nonlinear equation is made, and the phase portraits are presented on the phase plane. In addition, the bifurcation phenomena in the system are also analyzed. (C) 2008 Elsevier Inc. All rights reserved.

InN材料的RF-MBE生长及其禁带宽度研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

神经微电极阵列及MEMS 工艺研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

基于宽禁带半导体SiC 材料的紫外探测器及MEMS 微纳共振体

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

碳化硅材料的异质外延生长技术和射频MEMS器件研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

CMOS电路与MEMS微电极的单片集成化方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

用于MEMS器件的大面积3C-SiC薄膜的制备方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Threshold RF-DC Rectifier

This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE

AlInGaN quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). AlInGaN quaternary alloys with different compositions were acquired by changing the Al cell's temperature. The streaky RHEED patterns were observed during AlInGaN quaternary alloys growth. Scanning Electron Microscope (SEM), Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN quaternary alloys grow on the GaN buffer in the layer-by-layer growth mode. When the Al cell's temperature is 920 degrees C, the Al/In ratio in the AlInGaN quaternary alloys is about 4.7, and the AlInGaN can acquire better crystal and optical quality. The X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectively.

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorganic chemical vapor deposition (MOCVD) on 2-in. sapphire substrates. Two-dimensional electron gas (2DEG) mobility of 1410 cm(2)/Vs and concentration of 1.0X10(13) CM-2 are obtained at 295 K from the HEMT structures, whose average sheet resistance and sheet resistance uniformity are measured to be about 395 Omega/sq and 96.65% on 2-in. wafers, respectively. AlGaN/GaN HEMTs with 0.8 mu m gate length and 0.2 mm gate width were fabricated and characterized using the grown HEMT structures. Maximum current density of 0.9 A/ mm, peak extrinsic transconductance of 290 mS/mm, unity cutoff frequency (f(T)) of 20 GHz and maximum oscillation frequency (f(max) of 46 GHz are achieved. These results represent significant improvements over the previously fabricated devices with the same gate length, which are attributed to the improved performances of the MOCVD-grown HEMT structures. (c) 2005 Elsevier Ltd. All rights reserved.

Growth and characterization of InN on sapphire substrate by RF-MBE

Indium nitride (InN) films were grown on sapphire substrates by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL) spectroscopy were used to characterize the InN films. The results show that the InN films have good crystallinity, with full-width at half-maximum (FWHM) of InN (0 0 0 2) DCXRD peak being 14 arcmin. At room temperature, a strong PL peak at 0.79eV was observed. At 1.9eV or so, no peak was observed. In addition, it is found that the InN films grown with low-temperature (LT) InN buffer layer are of better quality than those without LT-InN buffer layer. (c) 2004 Elsevier B.V. All rights reserved.