用于MEMS器件的大面积3C-SiC薄膜的制备方法
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26/03/2008
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:21Z (GMT). No. of bitstreams: 1 full/200610126999.pdf: 506522 bytes, checksum: 605bc4db2134ea0492033957e084f23c (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
刘兴昉;孙国胜;李晋闽;赵永梅;王雷;赵万顺;李家业;曾一平,用于MEMS器件的大面积3C-SiC薄膜的制备方法 ,200610126999,20060918 |
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专利 |
