MEMS结构残余变形的SEM电镜云纹法实验研究

<正>微电子机械系统(MEMS)是集机械电子元件为一体具有传感、动作、控制操纵功能的集成系统。其结构由多层薄膜构成。它的制作工艺与宏观构件不同,是由薄膜刻蚀而制得的。制作过程中就可能形成残余应力。在去除牺牲层过程中残余应力释放而使得构件形状尺寸发生变化。实验结果表明,过大的残余应力致使MEMS构件发生翘曲破坏。由此可见,研究MEMS构件的残余应力是其设计中相当重要的问题。残余应力一般是通过残余变形即残余应变的量测而间接获得,因此,如何测量残余应变是十分重要问题。

Instability Analysis Of Torsional Mems/Nems Actuators Under Capillary Force

The static and dynamic instabilities of a torsional MEMS/NEMS actuator caused by capillary effects are studied, respectively. An instability number, eta, is defined, and the critical gap distance, g(cr), between the mainplate and the substrate is derived. According to the values of eta and g, the instability criteria of the actuator are presented. The dimensionless motion equation of the MEMS/NEMS torsional actuator is derived when it makes nonlinear oscillation under capillary force. The qualitative analysis of the nonlinear equation is made, and the phase portraits are presented on the phase plane. In addition, the bifurcation phenomena in the system are also analyzed. (C) 2008 Elsevier Inc. All rights reserved.

Friction properties of bio-mimetic nano-fibrillar arrays

Nano-fibrillar arrays are fabricated using polystyrene materials. The average diameter of each fiber is about 300 nm. Experiments show that such a fibrillar surface possesses a relatively hydrophobic feature with a water contact angle of 142 degrees. Nanoscale friction properties are mainly focused on. It is found that the friction force of polystyrene nano-fibrillar surfaces is obviously enhanced in contrast to polystyrene smooth surfaces. The apparent coefficient of friction increases with the applied load, but is independent of the scanning speed. An interesting observation is that the friction force increases almost linearly with the real contact area, which abides by the fundamental Bowden-Tabor law of nano-scale friction.

神经微电极阵列及MEMS 工艺研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

基于宽禁带半导体SiC 材料的紫外探测器及MEMS 微纳共振体

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

碳化硅材料的异质外延生长技术和射频MEMS器件研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

CMOS电路与MEMS微电极的单片集成化方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

用于MEMS器件的大面积3C-SiC薄膜的制备方法

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Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100 nm, and the rms roughness is 20nm (AFM 5 x 5 mu m images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.