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553 resultados para Si limitation

COMMENT ON NEGATIVE-U PROPERTY OF THE DX CENTER IN ALXGA1-XAS-SI - REPLY

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PHOTOREFLECTANCE AND PHOTOLUMINESCENCE CHARACTERIZATION OF GAAS GROWN ON SI

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LANTHANUM SILICIDE FORMATION IN THIN LA-SI MULTILAYER FILMS

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SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - PSEUDOPOTENTIAL CALCULATIONS

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SPATIAL DISTRIBUTIONS OF IMPURITIES AND DEFECTS IN TE-DOPED AND SI-DOPED GAAS GROWN IN A REDUCED GRAVITY ENVIRONMENT

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STUDY OF THE QUALITY OF GAAS THIN-FILM ON SI SUBSTRATE BY X-RAY-DIFFRACTION METHOD

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ELECTRONIC-PROPERTIES OF THE CR-SI(111) INTERFACES

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PHOTOEMISSION-STUDIES OF CHEMICAL BONDING AND ELECTRONIC STATES AT THE FE/SI INTERFACE

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PHASE-TRANSITION OF ATOMIC STRUCTURES ON SI(113) SURFACE

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A STUDY ON THE INITIAL-STAGES OF AU-SI(1 1 3) INTERFACE FORMATION

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CHARACTERIZATION OF SI-SIO2 INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE

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REGROWTH OF MBE-GAAS FILMS ON SI SUBSTRATES BY HIGH-ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING

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THE PASSIVATING EFFECT OF SI(100)-AS SURFACE AND THE ADSORPTION OF OXYGEN

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ELECTRON SPECTROSCOPIC STUDIES OF THE DY/SI(111) INTERFACE

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NEGATIVE-U PROPERTY OF THE DX CENTER IN ALXGA1-XAS-SI

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