CHARACTERIZATION OF SI-SIO2 INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE

Autoria(s): LU LW; GROESENDKEN G; HASENACK C
Data(s)

1989
Identificador

http://ir.semi.ac.cn/handle/172111/14435

http://www.irgrid.ac.cn/handle/1471x/101252
Idioma(s)

英语
Fonte

LU LW; GROESENDKEN G; HASENACK C.CHARACTERIZATION OF SI-SIO2 INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE,CHINESE PHYSICS LETTERS,1989,6(12):545-548
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital