SPATIAL DISTRIBUTIONS OF IMPURITIES AND DEFECTS IN TE-DOPED AND SI-DOPED GAAS GROWN IN A REDUCED GRAVITY ENVIRONMENT
| Data(s) |
1990
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
WANG ZG; LI CJ; WAN SK; LIN LY.SPATIAL DISTRIBUTIONS OF IMPURITIES AND DEFECTS IN TE-DOPED AND SI-DOPED GAAS GROWN IN A REDUCED GRAVITY ENVIRONMENT,JOURNAL OF CRYSTAL GROWTH,1990,103(0):38-45 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
