Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers

We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 mu m. The density of the QDs is increased to 1.17x10(10) cm(-2). It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs-based 1.3 mu m light sources.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density

We have systematically studied the temperature dependent photoluminescence of a self-assembled In(Ga)As/GaAs quantum dot (QD) system with different areal densities from similar to 10(9) to similar to 10(11) cm(-2). Different carrier channels are revealed experimentally and confirmed theoretically via a modified carrier equation model considering a new carrier transfer channel, i.e. continuum states ( CS). The wetting layer is demonstrated to be the carrier quenching channel for the low-density QDs but the carrier transfer channel for the high-density QDs. In particular, for the InGaAs/GaAs QDs with a medium density of similar to 10(10) cm(-2), the CS is verified to be an additional carrier transfer channel in the low temperature regime of 10-60 K, which is studied in detail via our models. The possible carrier channels that act on different temperature regimes are further discussed, and it is demonstrated that density is not a crucial factor in determining the carrier lateral coupling strength.

Gate controlled Aharonov-Bohm-type oscillations from single neutral excitons in quantum rings

We report on a magnetophotoluminescence study of single self-assembled semiconductor nanorings which are fabricated by molecular-beam epitaxy combined with AsBr3 in situ etching. Oscillations in the neutral exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. Further, we control the period of the oscillations with a gate potential that modifies the exciton confinement. We infer from the experimental results, combined with calculations, that the exciton Aharonov-Bohm effect may account for the observed effects.

Au(111)自组装膜表面原子力显微镜纳米刻蚀

在Au(111)硫醇自组装膜上通过原子力显微镜（AFM）纳米刻蚀加工了各种功能化纳米结构。本论文取得的主要成果如下： 1. “蘸笔”技术移除自组装膜及金基底 以烯丙基溴为墨水，用蘸笔技术在16－巯基十六羧酸（MHA）修饰的Au(111)基底上可以实现对金基底的直接加工，形成阴刻图案；并提出了详细的加工机理。 2. Au(111)自组膜表面的可逆加工 （1）利用乙醇修饰的导电AFM针尖通过电致刻蚀在Au(111)基底的烷基硫醇自组装膜上实现了阴阳刻图案的可逆加工。X射线光电子能谱分析表明阳刻图案的化学组成为氧化金，且此氧化金可被乙醇还原生成金得到阴刻图案。此阴刻图案可用作纳米模板，我们利用此模板加工了氧化铁磁性纳米结构和溶菌酶蛋白质纳米结构。 （2）用修饰硫醇的导电AFM针尖在Au(111)基底上实现了硫醇的可逆书写。 3. Au(111)自组膜表面官能团转化 用硫醇自组装膜修饰的Pt针在Au(111)基底的烷基硫醇自组装膜上实现了表面端基官能团转化。所得亲水性纳米图案可用作物理（如直接吸附纳米粒子）和化学纳米模板（如诱导硅烷自组装）。加工过程中基底自组装膜保持完整，未破坏Au-S键。 4. AFM研究适配子与血小板衍生生长因子－BB的相互作用 利用AFM电致刻蚀在HS-(CH2)12-(OCH2CH2)4-OH（EG4）/Au(111)上选择性移除EG4，在新暴露的金基底上生长血小板衍生生长因子－BB（PDGF-BB）适配子与EG4的混合自组装膜，通过PDGF-BB适配子与 PDGF-BB的特异性键合固定PDGF-BB，得到PDGF-BB的纳米图案。

扫描探针显微镜技术在自组装体系中的应用研究

本文简要评述了探针显微镜（SPM）技术的提出、发展及其在自组装体系中的研 究应用。采用SPM、电化学以及光谱等方法对低级醇化合物、磷脂膜、生物分子等 不同的自组装体系进行了研究，主要结果如下：1．研究了甲醇、乙醇、丁醇、己醇和辛醇分子在云母表面的吸附现象，提出 了随着碳链的增长，醇分子在云母表面的不同的吸附模型及变化规律；2．研究了辛醇分子在云母表面的吸附动力学过程，监测了辛醇在云母表面形成自组装膜的成核一生长一融合的生长过程；3，研究了由探针扫描引起的吸附十一醇分子在云母表面重排为规则有序膜结构的现象；4．研究“二-甲基一二-十八．烷基嗅化胺分子在云母表面用溶剂扩散方法展开形成类脂双层膜的动力学过程，提出了一种简便、易行的成膜方法；5．实现了细胞色素C在纳米金和硅溶胶一凝胶共同修饰的金电极上的直接电化学；6．实现了细胞色素C在疏基十一梭酸和琉基己醇的混合自组装膜上的直接电化学；7．实现了辣根过氧化物酶在纳米金修饰的导电玻璃电极上对过氧化氢的直接催化还原。

贵金属纳米粒子的化学合成和自组装纳米结构

一般来说，构筑自组装结构，需要首先构筑基本单元（BuildingBlocks）。广义来讲，原（离）子、分子、原子团、超分子、高分子、生物分子、纳米粒子以及其他尺度的粒子基元都可以充当自组装的基本单元。基本单元在一定条件下会自发聚集生成具有一定功能的材料一或器件。本文关心的是在纳米尺度（1-100纳米）范围内构筑贵金属纳米粒子自组装纳米结构。具体地说，我们侧重贵金属（金、银）纳米粒一子的化学合成，控制贵金属纳米粒子组装成特定的纳米结构（纳米粒子集合体），研究纳米粒子和纳米结构的等离子共振吸收和电化学特性。本文从以下几个方面展开叙述如下：（1）使用两相法，用相对廉价的阳离子表面活性剂十六烷基三甲基澳化按作为保护剂，合成了稳定的金纳米粒子。系统研究了该粒子在各种条件下的自组装过程：溶剂挥发诱导的自组装、双功能分子桥联的自组装和施加力场条件下的受迫自组装。（2）发现阳离子表面活性剂一四辛基漠化钱可以直接诱导水溶性带负电荷的金纳米粒子从水溶液到甲苯相的相转移。更有趣的是，相转移具有尺寸效应，利用尺寸效应可能会实现对某些多分散金纳米粒子进行尺寸精馏。（3）系统研究了小分子桥联的金纳米粒子的可控组装及等离子学和电化学特性。我们发现硫瑾染料分子、钴卟啉梁料分子、刚性分子导线、碘离子都可以作为连接金纳米粒子的，分子胶水。使用类似建筑学上的“砖块胶泥组装”策略可以在纳米尺度莎围内搭筑纳米建筑。所制备的纳米建筑具有可调节的等离子吸收和电催化特性。（4）使用微分脉冲伏安技术研究了银纳米粒子表面组装体在水溶液中的库仑阻塞现象。（5）分子膜支撑的金纳米粒子二维阵列具有纳米阵列电极行为，控制纳米粒子的组装调节了电极界面的异相电子转移动力学。（6）为了解决分子纳米表面修饰的聚集问题，我们发展了固定化纳米表面修饰的方法。该方法适用于分子单层、双层和多层分子自组装系统，并且可以直接进行光学和电化学表征。在纳米表面受限的分子自组装系统表现出了一些有趣的电化学特性。

The fabrication of GaN-based nanopillar light-emitting diodes

InGaN/GaN multiple quantum well-based light-emitting diode (LED) nanopillar arrays were fabricated using Ni self-assembled nanodots as etching mask. The Ni nanodots were fabricated with a density of 6 x 10(8)-1.5 x 10(9) cm(-2) and a dimension of 100-250 nm with varying Ni thickness and annealing duration time. Then LED nanopillar arrays with diameter of approximately 250 nm and height of 700 nm were fabricated by inductively coupled plasma etching. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved for the nanopillars and a blueshift as well as a decrease in full width at half maximum of the PL peak are also observed. The method of additional chemical etching was used to remove the etching-induced damage. Then nano-LED devices were further completed using a planarization approach to deposit p-type electrode on the tips of nanopillars. The current-voltage curves of both nanopillars and planar LED devices are measured for comparison.

Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing

Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then,the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration,～20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20～25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 × 10~(10)cm~(-2). The surface morphology evolution is investigated by AFM.

Growth of Space Ordered on GaAs（100） Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD

Space ordered 1.3μm self-assembled InAs QDs are grown on GaAs（100） vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower FWHM than those of dots on exact substrates, which indicates better material quality. To obtain 1.3μm emissions of InAs QDs, the role of the so called InGaAs strain cap layer （SCL） and the strain buffer layer （SBL） in the strain relaxation process in quantum dots is studied. While the use of SBL results only in a small change of emission wavelength,SCL can extend the QD＇s emission over 1.3μm due to the effective strain reducing effect of SCL.

Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission

The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1. 48 μtm emission is obtained at room temperature. Temperature dependent PL measurements show that the PL intensity of the emission is very steady. It decays only to half as the temperature increases from 15 K to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. These two emissions are attributed to large-size QDs and short period superlattices (SLs), respectively. Large-size QDs are easier to capture and confine carriers,which benefits the lifetime of PL, and therefore makes the emission intensity insensitive to the temperature.

Optimization of InGaAs Quantum Dots for Optoelectronic Applications

Self-assembled In_0.35Ga_0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM). In order to obtain high density and high uniformityu of quantum dots, optimized conditions are concluded for MBE growth. Optimized growth condi-tions also compared with these of InAs/GaAs quantum dots. This will be very useful for InGaAs/GaAs QDs opto-electronic applications, such as quantum dots lasers and quantum dots infrared photodetectors.

Controllable growth of semiconductor nanometer structures

Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alignment on InP(001) is discussed. (C) 2003 Elsevier Science Ltd. All rights reserved.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density

In this report, we have investigated the temperature and injection power dependent photoluminescence in self-assembled InAs/GaAs quantum dots (QDs) systems with low and high areal density, respectively. It was found that, for the high-density samples, state filling effect and abnormal temperature dependence were interacting. In particular, the injection power-induced variations were most obvious at the temperature interval where carriers transfer from small quantum dots (SQDs) to large quantum dots (LQDs). Such interplay effects could be explained by carrier population of SQDs relative to LQDs, which could be fitted well using a thermal carrier rate equation model. On the other hand, for the low density sample, an abnormal broadening of full width at half maximum (FWHM) was observed at the 15-100 K interval. In addition, the FWHM also broadened with increasing injection power at the whole measured temperature interval. Such peculiarities of low density QDs could be attributed to the exciton dephasing processes, which is similar to the characteristic of a single quantum dot. The compared interplay effects of high-and low-density QDs reflect the difference between an interacting and isolated QDs system.