Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
| Data(s) |
2006
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| Resumo |
We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 mu m. The density of the QDs is increased to 1.17x10(10) cm(-2). It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs-based 1.3 mu m light sources. We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 mu m. The density of the QDs is increased to 1.17x10(10) cm(-2). It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs-based 1.3 mu m light sources. zhangdi于2010-03-29批量导入 Made available in DSpace on 2010-03-29T06:06:08Z (GMT). No. of bitstreams: 1 2260.pdf: 442237 bytes, checksum: add96ef60832b923713575b50a4b8484 (MD5) Previous issue date: 2006 Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
WORLD SCIENTIFIC PUBL CO PTE LTD PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE |
| Fonte |
Fang, ZD (Fang, Zhidan); Gong, M (Gong, Meng); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) .Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers .见：WORLD SCIENTIFIC PUBL CO PTE LTD .International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series ,PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE ,2006,Vol 5 No 6 5 (6): 847-852 |
| Palavras-Chave | #半导体物理 #quantum dots #photoluminescence #combination layer #1.3 MU-M #LASERS #INALAS |
| Tipo |
会议论文 |
