Optimization of InGaAs Quantum Dots for Optoelectronic Applications

Self-assembled In_0.35Ga_0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM). In order to obtain high density and high uniformityu of quantum dots, optimized conditions are concluded for MBE growth. Optimized growth condi-tions also compared with these of InAs/GaAs quantum dots. This will be very useful for InGaAs/GaAs QDs opto-electronic applications, such as quantum dots lasers and quantum dots infrared photodetectors.

Self-assembled In_0.35Ga_0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM). In order to obtain high density and high uniformityu of quantum dots, optimized conditions are concluded for MBE growth. Optimized growth condi-tions also compared with these of InAs/GaAs quantum dots. This will be very useful for InGaAs/GaAs QDs opto-electronic applications, such as quantum dots lasers and quantum dots infrared photodetectors.

于2010-11-23批量导入

zhangdi于2010-11-23 13:07:24导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-23T05:07:24Z (GMT). No. of bitstreams: 1 4941.pdf: 599824 bytes, checksum: 9ad171c632b7e283c10d7a29151976e7 (MD5) Previous issue date: 2003

Novel Materials Department, Institute of Semiconductors, The Chinese Academy of Sciences