The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix
Data(s) |
1997
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Resumo |
We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses. We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:38导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:39Z (GMT). No. of bitstreams: 1 3066.pdf: 2846744 bytes, checksum: b8fd924313e2cdb76ca7c18653600572 (MD5) Previous issue date: 1997 Univv Nebraska, Coll Engn.; Ctr Mat Res & Anal. Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Univv Nebraska, Coll Engn.; Ctr Mat Res & Anal. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
V S V CO. LTD BOX 11, 105523 MOSCOW, RUSSIA |
Fonte |
Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ .The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix .见:V S V CO. LTD .PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12,BOX 11, 105523 MOSCOW, RUSSIA ,1997,219-225 |
Palavras-Chave | #半导体物理 #GROWTH #INTERDIFFUSION #ISLANDS #SCALE |
Tipo |
会议论文 |