Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
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2010
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| Resumo |
We have systematically studied the temperature dependent photoluminescence of a self-assembled In(Ga)As/GaAs quantum dot (QD) system with different areal densities from similar to 10(9) to similar to 10(11) cm(-2). Different carrier channels are revealed experimentally and confirmed theoretically via a modified carrier equation model considering a new carrier transfer channel, i.e. continuum states ( CS). The wetting layer is demonstrated to be the carrier quenching channel for the low-density QDs but the carrier transfer channel for the high-density QDs. In particular, for the InGaAs/GaAs QDs with a medium density of similar to 10(10) cm(-2), the CS is verified to be an additional carrier transfer channel in the low temperature regime of 10-60 K, which is studied in detail via our models. The possible carrier channels that act on different temperature regimes are further discussed, and it is demonstrated that density is not a crucial factor in determining the carrier lateral coupling strength. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17T00:50:51Z No. of bitstreams: 1 Temperature dependent photoluminescence of an In(Ga)As....pdf: 231058 bytes, checksum: ef6fe9730991d959b25d992aea6a6d27 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17T00:58:39Z (GMT) No. of bitstreams: 1 Temperature dependent photoluminescence of an In(Ga)As....pdf: 231058 bytes, checksum: ef6fe9730991d959b25d992aea6a6d27 (MD5) Made available in DSpace on 2010-08-17T00:58:39Z (GMT). No. of bitstreams: 1 Temperature dependent photoluminescence of an In(Ga)As....pdf: 231058 bytes, checksum: ef6fe9730991d959b25d992aea6a6d27 (MD5) Previous issue date: 2010 This work was supported by the 973 programme (2006CB604908, 2006CB921607) and the National Natural Science Foundation of China (60625402, 60990313). 其它 This work was supported by the 973 programme (2006CB604908, 2006CB921607) and the National Natural Science Foundation of China (60625402, 60990313). |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhou XL (Zhou X. L.), Chen YH (Chen Y. H.), Liu JQ (Liu J. Q.), Jia CH (Jia C. H.), Zhou GY (Zhou G. Y.), Ye XL (Ye X. L.), Xu B (Xu Bo), Wang ZG (Wang Z. G.).Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density.JOURNAL OF PHYSICS D-APPLIED PHYSICS,2010,43(29):Art. No. 295401 |
| Palavras-Chave | #半导体材料 #CARRIER RELAXATION #STATES #SUPERLATTICES #CONFINEMENT #LASER |
| Tipo |
期刊论文 |
