Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy

Rapid thermal annealing (RTA) has been demonstrated as an effective way to improve the crystal quality of GaInNAs(Sb) quantum wells (QWs). However, few investigations have been made into its application in laser growth and fabrication. We have fabricated 1.3 mu m GaInNAs lasers, both as -grown and with post-growth RTA. Enhanced photoluminescence (PL) intensity and decreased threshold current are obtained with RTA, but the characteristic temperature T-o and slope efficiency deteriorate. Furthermore, T-o has an abnormal dependence on the cavity length. We attribute these problems to the deterioration of the wafer's surface. RTA with deposition Of SiO2 was performed to avoid this deterioration, T-o was improved over the samples that underwent RTA without SiO2. Post-growth and in situ annealing were also investigated in a 1.55 mu m GaInNAsSb system. Finally, continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength over 1.55 mu m was realized by introducing an in situ annealing process. (c) 2007 Elsevier B.V. All rights reserved.

High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector

A 1.55 mu m low-temperature-grown GaAs (LT-GaAs) photodetector with a resonant-cavityenhanced structure was designed and fabricated. A LT-GaAs layer grown at 200 degrees C was used as the absorption layer. Twenty- and fifteen-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. A responsivity of 7.1 mA/W with a full width at half maximum of 4 nm was obtained at 1.61 mu m. The dark current densities are 1.28x10(-7) A/cm(2) at the bias of 0 V and 3.5x10(-5) A/cm(2) at the reverse bias of 4.0 V. The transient response measurement showed that the photocarrier lifetime in LT-GaAs is 220 fs. (c) 2006 American Institute of Physics.

1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots

Self-assembly Ge quantum dots (QD) on Si and Si/Ge mutli-quantum-wells (MQW) are grown by MBE. The island size and island density was investigated by atomics force microscopy. Ten-layer and twenty-layer MQW were selected for photodiode device fabrication. In photoluminescence (PL), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer MQW which had less defects than the 20-layer sample. Resonant cavity enhanced (RCE) photodiodes were fabricated by bonding on a SOI wafer. Selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 Elsevier B.V. All rights reserved.

The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content

Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 mu m range is much more apparent than that in the 1.3 mu m range.. which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 mu m single-QW were comparable with that of the 1.3 Am QWs. (c) 2006 Elsevier B.V. All rights reserved.

Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers

Rapid thermal annealing (RTA) has been demonstrated as an important way to improve the crystal quality of GaInNAs(Sb)/GaAs quantum wells. However little investigation has been made into their application in laser growth, especially at a wavelength of 1.55 mu m. When a GaAs-based laser is grown, AlGaAs is usually used for cladding layers. The growth of the p-cladding layer usually takes 30-45 min at a growth temperature higher than that of the GaInNAs(Sb) active region, which affects the material quality. To investigate this effect, various post-growth annealing processes were performed to simulate this process. Great enhancement of the PL intensity was obtained by a two-step process which consisted of annealing first at 700 degrees C for 60 s and then at 600 degrees C for 45 min. We transferred this post-growth annealing to in situ annealing. Finally, a GaInNAsSb laser was grown with a 700 degrees C in situ annealing process. Continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength beyond 1.55 mu m was realized for the first time.

Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy

Self-assembled InAs nanostructures on (0 0 1)InP substrate have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL). It is found that the morphologies of InAs nanostructures depend strongly on the underlying alloy. Through introducing a lattice-matched underlying InAlGaAs layer on InAlAs buffer layer, the InAs quantum dots (QDs) can be much more uniform in size and great improvement in PL properties can be attained at the same time. In particular, 1.55 mu m luminescence at room temperature (RT) can be realized in InAs QDs deposited on (0 0 1)InP substrate with underlying InAlGaAs layer. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots

Self-assembly Ge quantum dots (QD) on Si and Si/Ge mutli-quantum-wells (MQW) are grown by MBE. The island size and island density was investigated by atomics force microscopy. Ten-layer and twenty-layer MQW were selected for photodiode device fabrication. In photoluminescence (PL), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer MQW which had less defects than the 20-layer sample. Resonant cavity enhanced (RCE) photodiodes were fabricated by bonding on a SOI wafer. Selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 Elsevier B.V. All rights reserved.

High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.

低剂量X射线辐射对BALB/C小鼠免疫系统的影响

为评估低剂量辐射对健康机体产生的生物学风险,检测了低剂量X射线照射对BALB/C小鼠免疫系统的影响。采用X射线全身照射,剂量分别为0、0.39、0.55和1Gy,剂量率为0.2Gy/min,照射24h后取血及器官,用流式细胞仪检测免疫细胞周期和凋亡的变化,用重量法得到胸腺和脾脏指数。发现照射后小鼠的外周血淋巴细胞、胸腺细胞和脾脏淋巴细胞的周期被阻滞在G0—G1期;外周血淋巴细胞和胸腺细胞的凋亡比例随剂量的增大而增大,但是脾脏淋巴细胞的凋亡随着剂量的增大而减小;胸腺和脾脏指数随着剂量的增大而减小。故低剂量X射线全身照射可引起试验动物的免疫细胞周期和凋亡比例发生变化,对其造成一定的损伤;对小鼠免疫系统的影响因器官而异。本实验可为辐射防护提供实验依据。

Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

Structural stability of C-60 films under the bombardment of 1.95 GeV Kr ions

The structural stability of C-60 films under the bombardment of 1.95 GeV Kr ions is investigated. The irradiated C-60 films were analyzed by Fourier Transform Infrared (FTIR) spectroscopy and Raman scattering technique. The analytical results indicate that the irradiation induced a decrease of icosahedral symmetry of C-60 molecule and damage of C-60 films; different vibration modes of C-60 molecule have different irradiation sensitivities; the mean efficient damage radius obtained from experimental data is about 1.47 nm, which is in good agreement with thermal spike model prediction.

The effect of methanol and ethanol cross-over on the performance of PtRu/C-based anode DAFCs

In the present work, the cross-over rates of methanol and ethanol, respectively, through Nafion(R)-115 membranes at different temperatures and different concentrations have been measured and compared. The changes of Nafion(R)-115 membrane porosity in the presence of methanol or ethanol aqueous solutions were also determined by weighing vacuum-dried and alcohol solution-equilibrated membranes. The techniques of anode polarization and adsorption stripping voltarnmetry were applied to compare the electrochemical activity and adsorption ability, respectively. To investigate the consequences of methanol and ethanol permeation from the anode to the cathode on the performance of direct alcohol fuel cells (DAFCs), single DAFC tests, with methanol or ethanol as the fuel, have been carried out and the corresponding anode and cathode polarizations versus dynamic hydrogen electrode (DHE) were also performed. The effect of alcohol concentration on the performance of PtRu/C anode-based DAFCs was investigated.

The direct electrochemistry behavior of Cyt c on the modified glassy carbon electrode by SBA-15 with a high-redox potential

It is discovered that SBA-15 (santa barbara amorphous) can provide the favorable microenvironments and optimal direct electron-transfer tunnels (DETT) of immobilizing cytochrome c (Cyt c) by the preferred orientation on it. A high-redox potential (254 mV vs. Ag/AgCl) was obtained on glassy carbon (GC) electrode modified by immobilizing Cyt c on rod-like SBA-15. With ultraviolet-visible (UV-vis), circular dichroism (CD), FTIR and cyclic voltammetry, it was demonstrated that immobilization made Cyt c exhibits stable and ideal electrochemical characteristics while the biological activity of immobilized Cyt c is retained as usual.

Surface-enhanced resonance Raman spectroscopy and spectroscopy study of redox-induced conformational equilibrium of cytochrome c adsorbed on DNA-modified metal electrode

The redox-induced conformational equilibrium of cytochrome c (cyt c) adsorbed on DNA-modified metal electrode and the interaction mechanism of DNA with cyt c have been studied by electrochemical, spectroscopic and spectroelectrochemical techniques. The results indicate that the external electric field induces potential-dependent coordination equilibrium of the adsorbed cyt c between its oxidized state (with native six-coordinate low-spin and non-native five-coordinate high-spin heme configuration) and its reduced state (with native six-coordinate low-spin heme configuration) on DNA-modified metal electrode. The strong interactions between DNA and cyt c induce the self-aggregation of cyt c adsorbed on DNA. The orientational distribution of cyt c adsorbed on DNA-modified metal electrode is potential-dependent, which results in the deviation from an ideal Nernstian behavior of the adsorbed cyt c at high electrode potentials. The electric-field-induced increase in the activation barrier of proton-transfer steps attributed to the rearrangement of the hydrogen bond network and the self-aggregation of cyt c upon adsorption on DNA-modified electrode strongly decrease the interfacial electron transfer rate.