High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector
| Data(s) |
2006
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| Resumo |
A 1.55 mu m low-temperature-grown GaAs (LT-GaAs) photodetector with a resonant-cavityenhanced structure was designed and fabricated. A LT-GaAs layer grown at 200 degrees C was used as the absorption layer. Twenty- and fifteen-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. A responsivity of 7.1 mA/W with a full width at half maximum of 4 nm was obtained at 1.61 mu m. The dark current densities are 1.28x10(-7) A/cm(2) at the bias of 0 V and 3.5x10(-5) A/cm(2) at the reverse bias of 4.0 V. The transient response measurement showed that the photocarrier lifetime in LT-GaAs is 220 fs. (c) 2006 American Institute of Physics. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Han Q (Han Q.); Niu ZC (Niu Z. C.); Peng LH (Peng L. H.); Ni HQ (Ni H. Q.); Yang XH (Yang X. H.); Du Y (Du Y.); Zhao H (Zhao H.); Wu RH (Wu R. H.); Wang QM (Wang Q. M.) .High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector ,APPLIED PHYSICS LETTERS,2006 ,89(13):Art.No.131104 |
| Palavras-Chave | #光电子学 #HIGH-SPEED #CARRIER DYNAMICS #M OPERATION #1.55-MU-M #POWER |
| Tipo |
期刊论文 |
