光通信用1.55微米InGaAsP/InP DH激光器中的0.95微米发光和俄歇复合

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

长波长（1.3-1.55μm）自组织InGaAs/GaAs量子点的分子束外延生长

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si 基1.55 微米RCE 探测器的材料生长与器件制作

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

1.3-1.55 m GaInNAs 多量子阱共振腔增强型探测器

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs 基1.3-1.55μm GaInNAs(Sb)量子阱及激光器、探测器的分子束外延生长

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs 基1.55μm 波段InAs 自组织量子分子束外延生长

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs 基1.55 μm GaInNAs(Sb)、异变InGaAs 量子阱材料与激光器

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

1.3-1.55 微米 GaInNAs(Sb)/GaAs 量子阱生长与激光器制备研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InP基1.55μm波长高性能波导探测器研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs 基1.55 微米异变InGaAs高性能探测器的研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T06:25:37Z No. of bitstreams: 1 朱彬：异变1.55微米InGaAs高性能探测器的研究.pdf: 2216549 bytes, checksum: fa478c11726e2e9949d3ef39dfb34370 (MD5)

A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

National Natural Science Foundation of China 60536030 60776024 60877035 90820002 National High-Technology Research and Development Program of China 2007AA04Z329 2007AA04Z254

Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

制作用于1.55微米通信波段硅波导光电转换器的方法

本发明公开了一种制作用于1.55微米通信波段的硅波导光电转换器的方法，包括:在SOI的顶层硅上刻蚀出直波导和环形波导，使二者相切或保持一定的耦合关系;在环形波导两侧分别注入或扩散V族和III族离子并退火，形成波导侧壁连续的n型和p型掺杂区，在环形波导表层构造横向p-i-n结构，并控制本征区i的宽度;向环形波导表面的本征区i内注入硅离子、银离子或氢离子，并退火，形成深能级缺陷;在n型和p型掺杂区表面、以及SOI材料背面分别蒸发金属电极，形成非带隙吸收、深能级电荷遂穿、波长可调的硅波导光电转换器。利用本发明，使硅波导p-i-n横向结构对1.55微米波段能够进行探测，并利用热效应来调节转换波长。

Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m

A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0. 16 A/W at the resonance wavelength of 1.55 mu m have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. (C) 2007 Elsevier B.V. All rights reserved.