Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

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Made available in DSpace on 2010-08-17T02:54:12Z (GMT). No. of bitstreams: 1 Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition.pdf: 325358 bytes, checksum: bda9357acca18f6b0b146466350228a3 (MD5) Previous issue date: 2010

This work was partly supported by the National Basic Research Program of China (973 Program) under grant No. 2007CB613404 and Program for New Century Excellent Talents in University.

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This work was partly supported by the National Basic Research Program of China (973 Program) under grant No. 2007CB613404 and Program for New Century Excellent Talents in University.