有机白光电致发光器件的研究

有机电致发光显示作为最有前景的平板显示技术已经得到了越来越多的关注，而实现全色显示是其发展的必然趋势。在实现全色显示的几种方法中，利用白光电致发光器件加彩色滤光膜技术具有可实现高分辨率和简单加工的优势，而且可应用液晶显示器的彩色滤光膜技术，所以可能成为未来全彩色化的主流技术。由于白光有机电致发光器件在全色显示以及照明等方面具有的潜在应用价值，从而引起了人们越来越多的研究兴趣，近十年的研究也不断地取得新的突破。然而从目前的研究来看，白光器件距离大规模的商业化应用还有一定的距离，存在的问题突出地表现在低的发光效率和亮度以及器件的稳定性等方面。在本文中，我们系统的研究了两种类型的有机白光器件。采用染料掺杂的方法，通过多层结构对载流子的注入和传输以及激子复合区的调控实现了白光有机发光器件，这种白光有机电致发光器件具有高效率、高亮度、良好光谱稳定性的特点。制备的器件最高发光亮度为17100ed／mZ，电流效率和功率效率分别为13．1cd／A和5．51耐W。对于荧光有机小分子材料制备的白光器件来说，这是到目前为止报道的较为理想的实验结果。研究了利用叠层结构制备白光有机电致发光器件的新方法，采用电荷生成层将几个发光单元串接起来，各个发光单元之间互不影响，由几个发光单元分别发出的不同颜色的光叠加，最终形成白光发射。这种叠层结构的器件，具有高效率、光谱稳定性好的优点，制备的器件最高亮度loZooed／m2，最大电流效率10．7cd／A，最大功率效率为2．5Inm/W。这是目前首次用叠层器件结构制备出的白光有机发光器件的最好结果。

有机电磷光器件的研究

自1987年C.W.Tang等人首次报道以Alq_3为发光材料的多层结构有机电致发光器件以来，由于其简单工艺、低成本、主动发光、快速响应以及大面积和柔性可弯曲显示等特点，使其在未来的平板显示领域显示了诱人的应用前景，其研究倍受关注。近些年来，有机发光二极管己经开始商品化。其中，三重态电磷光有机发光材料以其在效率，亮度等方面的优秀性能表现，成为了该领域重要的研究课题。在众多的电磷光材料中，重金属铱的配合物的很多优点引起了广泛的研究。铱配合物电磷光不仅具备了磷光材料理论上可能达到了100％内量子效率的优势，还以其独特的金属一配体电荷跃迁发光性质实现了可见光范围内的全色发光。本论文主要研究了有机电磷光铱配合物的电致发光性能，从不同分子结构铱配合物在不同掺杂浓度下的优化、器件结构设计、母体材料选择以及电磷光发光器件的瞬态特性等方面进行了详细研究，开发出了高效率纯红光有机电磷光发光器件，实现了高效率单层电磷光聚合物发光二极管，用稀土配合物做电磷光掺杂的母体在一定程度上解决了电磷光器件在高电流密度下快速退化问题，对有机电磷光器件的三重态一三重态湮灭和激子衰减动力学过程有了初步认识。（1）研究了几种新型红光铱配合物的电致发光性能：①开发出了以毗嗦为配体的铱配合物，发现其发光光谱（光致和电致）均比哇琳为配体的铱配合物有大幅度的红移，如此制备出了主峰在677nm，色坐标为（0.71，0.28）的深红色有机电磷光器件，器件的外量子效率达到了5.5％以上；②比较了以嗯哇和噬哇为配体的配合物的电致发光性能，发现在结构相近的情况下，电负性越强的原子导致发射光谱蓝移，而在配体上引入高电负性O原子在一定程度上提高了器件的电致发光性能。（2）在高效有机发光器件的制备和结构优化等方面开展的一系列工作得到了如下结论：①不同取代基团配体铱配合物依赖于掺杂浓度，通过优化器件可以获得最好的电致发光性能。②用旋涂方法，通过对电子和空穴注入和传输的调控制备出了高效率单层有机电磷光发光器件，最大发光效率达到了25.2cd／A，由于减少了电子和空穴在磷光分子的直接俘获，避免了空间电荷积累引起的空间电场问题，使器件的电致发光性能得到了显著地提高。③研究了用稀土试络合物作为主体材料，掺杂一种铱配合物的电磷光有机发光二极管的电致发光性能，发现在较高的电流密度下，器件的电致发光效率仍然保持较好的稳定性，有效地降低了三重态一三重态湮灭引起的退化问题。（3）我们用瞬态电致发光方法详细研究了电磷光有机发光器件的三重态一三重态湮灭和激子衰减动力学过程，确定了不同取代基团苯基噬哇铱配合物的三重态激子的寿命τ、三重态一三重态湮灭常数K和饱和电流以及它们与器件电致发光效率的关系，这方面的研究对澄清有机发光器件的工作原理和退化机制，进一步改善器件性能具有重要意义。

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

Some properties of gallium nitride films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy

The Raman and photoreflectivity spectra of gallium nitride (GaN) films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy (GSMBE) have been investigated. The Raman spectra showed the presence of the E-2(high) mode and a shift in the wavenumber of this mode with respect to the GaN epilayer thickness. The Raman scattering results suggest the presence of stress due to lattice and thermal expansion misfit in the films, and also indicate that the buffer layer play an important role in the deposition of high quality GaN layers. The residual stress changes from tensile to compressive as the epilayer thickness increases. Samples subjected to anneal cycles showed an increase in the mobility due probably to stress relaxation as suggested by an observed shift in the E-2(high) mode in the Raman spectra after annealing.

Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy

Films of GaN have been grown using a modified MBE technique in which the active nitrogen is supplied from an RF plasma source. Wurtzite films grown on (001) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure, the (0001) planes of the layers being parallel to the (001) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (111) oriented GaAs and GaP substrates. The improved structural properties of such films, assessed using X-ray and TEM method, correlate with better low-temperature FL.

Optical properties of AIInGaN quaternary alloys

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL). The fast redshift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/tau)(beta)], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed quantum dots or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent 8 on the temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered quantum dots. Furthermore, the localized states are found to have OD density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature.

The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.

Growth and characterization of GaN on LiGaO2 and LiAlO2

The nearly lattice-matched LiGaO2 and LiAlO2 substrates have been used for the growth of GaN by LP-MOVPE. GaN epilayers have been grown on the two substrates at very low input partial pressure of hydrogen and relatively low growth temperature. The difference in the growth rate, crystal and optical qualities of hexagonal GaN epilayers grown on LiAlO2 and LiGaO2 substrate with two polar domains are investigated. LiAlO2 and LiGaO2 single crystal with a single domain structure and an adequate surface plane are promising substrates for the growth of high quality of hexagonal GaN thin films.

Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.

Hydrogen related defects in InP

Local vibrational modes(LVMs) in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atom(s) and isolated hydrogen or hydrogen dimers and complexes of hydrogen with various impurities and intrinsic defects are investigated by FTIR. Especially hydrogen related complexes between various transition metals and hydrogen or hydrogen related complexes between hydrogen with point defects. New LVMs related to hydrogen will be reported in this paper. Dynamical formation mechanism of defects in the annealed nominally undoped semiinsulating InP obtained by high pressure, high temperature annealing of ultra purity materials is proposed. Hydrogen can acts as actuator for antistructure defects production. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effects are discussed.

Design of high brightness cubic-GaN LEDs grown on GaAs substrate

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

AlGaInP LED with surface structure of two-dimensional photonic crystal

Some progress in the research of GaN based LED with photonic crystal structure has been made recently. Based on the photonic crystal's photonic band gap effect and photon grating diffraction principle, the extraction efficiency of LED with photonic crystal can be improved. In this paper, the restriction on AlGaInP LED's extraction efficiency is analyzed, and the photonic crystal is introduced in to the AlGaInP LED to improve the extraction efficiency. The theoretical analyses and the experiment results show that the output luminous intensity of LED with photonic crystal is improved by 16%, which results from some effect of the GaN based LED with photonic crystal.

Studying the Attribution of LiF in OLED by the C-V Characteristics

The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq(3))/LiF/Al and ITO/Alq(3)/Al was fabricated to analyze the contribution of LiF in OLED. We used the C-V characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.