AlGaInP LED with surface structure of two-dimensional photonic crystal

Some progress in the research of GaN based LED with photonic crystal structure has been made recently. Based on the photonic crystal's photonic band gap effect and photon grating diffraction principle, the extraction efficiency of LED with photonic crystal can be improved. In this paper, the restriction on AlGaInP LED's extraction efficiency is analyzed, and the photonic crystal is introduced in to the AlGaInP LED to improve the extraction efficiency. The theoretical analyses and the experiment results show that the output luminous intensity of LED with photonic crystal is improved by 16%, which results from some effect of the GaN based LED with photonic crystal.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-27T07:36:12Z No. of bitstreams: 1 表面为二维光子晶体结构的AlGaInP系发光二极管的研究.pdf: 1125833 bytes, checksum: 0032b0f36857e7aa970715c6915702fe (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-27T12:23:40Z (GMT) No. of bitstreams: 1 表面为二维光子晶体结构的AlGaInP系发光二极管的研究.pdf: 1125833 bytes, checksum: 0032b0f36857e7aa970715c6915702fe (MD5)

Made available in DSpace on 2010-12-27T12:23:40Z (GMT). No. of bitstreams: 1 表面为二维光子晶体结构的AlGaInP系发光二极管的研究.pdf: 1125833 bytes, checksum: 0032b0f36857e7aa970715c6915702fe (MD5) Previous issue date: 2010

Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2006AA03A121, 2008AA03Z402), the National Basic Research Program of China (Grant Nos. 2006CB604902, 2006CB921705), the Natural Science Foundation of Beijing, China (Grant No. 4092007).

国内

Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2006AA03A121, 2008AA03Z402), the National Basic Research Program of China (Grant Nos. 2006CB604902, 2006CB921705), the Natural Science Foundation of Beijing, China (Grant No. 4092007).