Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.

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Japan Soc Promot Sci, 162nd & 125th Comm.; Support Ctr Adv Telecommun Technol Res Fdn.; Nippon Sheet Glass Fdn Mat Sci.; Res Fdn Electrotechnol Chubu.; Inoue Fdn Sci.; Chiba Convent Bureau.; Ogasawara Fdn Promot Sci & Engn.; Izumi Sci & Technol Fdn.; Murata Sci Fdn.; Telecommun Advancement Fdn.; Suzuki Fdn.; FUTABA Electr Memorial Fdn.

Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Japan Soc Promot Sci, 162nd & 125th Comm.; Support Ctr Adv Telecommun Technol Res Fdn.; Nippon Sheet Glass Fdn Mat Sci.; Res Fdn Electrotechnol Chubu.; Inoue Fdn Sci.; Chiba Convent Bureau.; Ogasawara Fdn Promot Sci & Engn.; Izumi Sci & Technol Fdn.; Murata Sci Fdn.; Telecommun Advancement Fdn.; Suzuki Fdn.; FUTABA Electr Memorial Fdn.