激光二极管抽运Na，Yb共掺CaF2晶体自调Q激光特性的研究

利用激光二极管（LD）抽运新型Na．Yb共掺CaF2（Na．Yb：CaF2）晶体，获得了1．05μm的自调Q激光输出。利用透射率1％的耦合输出镜，得到最低激光输出的抽运阈值功率仅为70mW。在透射率为2％的输出镜条件下，得到最大输出激光功率为390mw，此时激光的斜度效率达到20%。实验详细记录了自调Q脉冲的周期和宽度随抽运功率的变化关系，随着抽运功率的增加，自调Q脉冲的周期和宽度呈指数衰减。同时，还采用单棱镜进行光谱调谐实验，获得了1036～1059nm的自调Q激光调谐输出。

提拉法生长大尺寸γ-LiAlO2单晶的研究(英文)

由于与GaN晶格失配小(约1．4％)，γ-LiAlO2单晶有望成为一种很有希望的GaN外延衬底材料。本文使用提拉法生长出了尺寸达Ф5×50mm^3的γ-LiAlO2单晶。对该晶体毛坯的各个有代表性的位置作了X射线粉末衍射(XRPD)分析，结果表明仅仅在晶体毛坯的底部生成了一种缺锂相(LiAl5O8)。γ-LiAlO2晶体化学稳定性差，在室温时轻微水解。当在空气中于1100℃退火70h，γ-LiAlO2晶体挥发出锂组分，在表面产生缺锂相(LiAl5O8)。值得注意的是，在γ-LiAlO2晶体的红外光谱区不存

r面白宝石单晶的温梯法生长及缺陷研究

本文描述使用温梯法（TGT）生长（1-↑102）方向的白宝石单晶，应用X射线双晶摇摆曲线（XRC）测定了晶体内部的完整性，再利用KOH熔体腐蚀出样品的r面（1-↑102）上的位错蚀坑，借助扫描电子显微镜（SEM）进行观察，发现r面白宝石的位错腐蚀坑呈等腰三角形，并且有台阶状结构，并分析了位错的成因。

透明导电氧化物β-Ga2O3单晶生长的研究进展

本文对β-Ga2O3单晶体的研究情况进行了综合，主要介绍了β-Ga2O3单晶体的生长方法：Verneuil法、提拉法和浮区法生长技术，并简单介绍了β-Ga2O3单晶体的光学和电学性质及其在GaN衬底方面的应用。β-Ga2O3单晶体的优异性质使其可以成为新一代的透明导电材料。

Yb:YAP与Yb:YAG晶体光谱性能比较

应用中频感应提拉法生长出掺杂浓度为10 at.-%的Yb:YAG与Yb:YAP晶体，对比了室温下两种晶体的吸收和发射光谱特性。结果表明，Yb:YAG晶体比Yb:YAP晶体有更好的激光性能和低的阈值；同时对比发现，Yb:YAP晶体的吸收截面是Yb:YAG晶体的2.16倍，它容易实现LD泵；由于Yb:YAP晶体的各向异性，它有轴向效应明显，它可以产生偏振激光。

β-Ga2O3 单晶NH3中氮化的研究

为了将β-Ga2O3单晶应用于作为外延生长优质GaN薄膜的衬底材料，本文对β-Ga2O3 (100)进行了氮化处理，并且主要讨论了氮化温度以及β-Ga2O3表面的粗糙程度对GaN形成的影响。我们发现，最理想的氮化温度在900oC。此时，在抛光的β-Ga2O3的表面上生成了一层具有六方结构并且有择优取向的GaN层。本文同时也对氮化的机理进行了讨论。

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

Tm:Y_2SiO_5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.

Lancifodilactone G: A unique nortriterpenoid isolated from Schisandra lancifolia and its anti-HIV activity

Lancifodilactone G (1), a novel, highly oxygenated nortriterpenoid featuring a partial enol structure and a spirocyclic moiety, was isolated from the medicinal plant Schisandra lancifolia. Its structure and stereochemistry were determined from extensive one- and two-dimensional NMR and mass spectral data, coupled with single-crystal X-ray analysis. Compound 1 exerted minimal cytotoxicity against C8166 cells (CC50 > 200 mu g/mL) and showed anti-HIV activity with EC50 = 95.47 +/- 14.19 mu g/mL and a selectivity index in the range of 1.82-2.46.

Lancifodilactone F: A novel nortriterpenoid possessing a unique skeleton from Schisandra lancifolia and its anti-HIV activity

Lancifodilactone F (1), possessing an unprecedented rearranged pentanortriterpenoid backbone derived from cycloartane, was isolated from the leaves and stems of Schisandra lancifolia (Rehd. et Wils) A. C. Smith. Its structure was established by comprehensive NMR and MS spectroscopic analysis, coupled with single-crystal X-ray experiment. Compound 1 exerted minimal cytotoxicity against C8166 cells (CC50 > 200 mu g/mL) and showed anti-HIV activity with EC50 = 20.69 +/- 3.31 mu g/mL and a selectivity index > 6.62.

Przewalskin A: A new C-23 terpenoid with a 6/6/7 carbon ring skeleton from Salvia przewalskii maxim

Przewalskin A (1), a novel C-23 terpenoid with a 6/6/7 carbon ring skeleton, was isolated from Salvia przewalskii. Its structure was determined by comprehensive 1D NMR, 2D NMR, and MS spectroscopic analysis and subsequently confirmed by a single-crystal X

Przewalskin B, a novel diterpenoid with an unprecedented skeleton from Salvia przewalskii maxim

[GRAPHIC] Przewalskin B (1), a novel diterpenoid possessing a unique skeleton, was isolated from a Chinese medicinal plant Salvia przewalskii. Its structure and relative stereochemistry were elucidated by extensive NMR analysis and a single-crystal X-ray

Chemical Constituents from the Leaves and Stems of Schisandra rubriflora

Six new nortriterpenoids, schirubridilactones A-F (1-6). as well as 14 known compounds, were isolated from the leaves and stems of Schisandra rubriflora. The Structures of 1-6 were elucidated oil the basis of spectroscopic methods including HSQC, HMBC, H-1-H-1 COSY, and ROESY NMR experiments. The relative stereochemistry of I was confirmed through single-crystal X-ray analysis. In addition, compounds 1-6 showed anti-HIV-1 activity with EC50 values in the range 14.3-80.8 mu g/mL and Selectivity indices in the range 2.2-9.0.

First-principles study of ground-state properties and high pressure behavior of ThO2

The mechanical properties, electronic structure and phonon dispersion of ground state ThO2 as well as the structure behavior up to 240 GPa are studied using first-principles density-functional theory. Our calculated elastic constants indicate that both the ground-state fluorite structure and high pressure cotunnite structure of ThO2 are mechanically stable. The bulk modulus, shear modulus, and Young's modulus of cotunnite ThO2 are all smaller by approximately 25% compared with those of fluorite ThO2. The Poisson's ratios of both structures are approximately equal to 0.3 and the hardness of fluorite ThO2 is 22.4 GPa. The electronic structure and bonding nature of fluorite ThO2 are fully analyzed, and show that the Th-O bond displays a mixed ionic/covalent character. The phase transition from the fluorite to cotunnite structure is calculated to occur at the pressure of 26.5 GPa, consistent with recent experimental measurement by ldiri et al. [1]. For the cotunnite phase it is further predicted that an isostructural transition takes place in the pressure region of 80-130 GPa.

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

(110) oriented ZnO thin films were epitaxially prepared on (001) SrTiO3 single crystal substrates by a pulsed laser deposition method. The evolution of structure, surface morphology, and electrical conductivity of ZnO films was investigated on changing the growth temperature. Two domain configurations with 90 degrees rotation to each other in the film plane were found to exist to reduce the lattice mismatch between the films and substrates. In the measured temperature range between 80 K and 300 K, the electrical conductivity can be perfectly fitted by a formula of a (T) = sigma(0) + aT(b/2). implying that the electron-phonon scattering might have a significant contribution to the conductivity. (C) 2008 Elsevier Ltd. All rights reserved.