Tunnel Junction AlGaInP Light Emitting Diode

The n-type GaAs substrates are used and their conductive type is changed to p-type by tunnel junction for AlGaInP light emitting diodes (TJ-LED), then n-type GaP layer is used as current spreading layer. Because resistivity of the n-type GaP is lower than that of p-type, the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n-type GaP current spreading layer. For TJ-LED with 3μm n-type GaP current spreading layer, experimental results show that compared with conventional LED with p-type GaP current spreading layer, light output power is increased for 50% at 20mA and for 66.7% at 100mA.

Fiber Coupling of Laser Diode Bar to Multimode Fiber Array

A piece of multimode optical fiber with a low numerical aperture (NA) is used as an inexpensive microlens to collimate the output radiation of a laser diode bar in the high numerical aperture (NA) direction. The emissions of the laser diode bar are coupled into multimode fiber array. The radiation from individual ones of emitter regions is optically coupled into individual ones of fiber array. Total coupling efficiency and fiber output power are 75% and 15W, respectively.

Spotsize Converter Integrated DFB Laser Diode Using Selective Area Growth of MOCVD

The characteristics of thickness enhancement factor and bandgap wavelength of selectively grown In-GaAsP are investigated. A high thickness enhancement factor of 2.9 is obtained. Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG. The threshold current is as low as 10.8mA. The output power is 10m W at 60mA without coating and the SMSR is 35.8dB. The vertical far field angle (FWHM) is decreased from 34 °to 9 °. The tolerance of 1dBm misalignment is 3.4μm vertically.

硅基MIS隧道二极管的研究

硅基MIS隧道发光二极管为制造用于超大规模集成电路的硅基发光器件提供了可能性。报道了MIS隧道发光二极管(MISLETD)的制作过程、电流－电压和发射光谱特性，讨论了负阻现象和发光机理。

Monolithic Integration of DFB Laser Diode and Electroabsorption Modulator by Selective Area Growth Technology

国家863计划

金属/绝缘层/硅（MIS）隧道二极管的发光机理

金属/绝缘层/硅(MIS)隧道发光二极管的发光机理可以归结为表面等离极化激元(SPP)与界面粗糙度的耦合。电流－电压特性曲线中6.5V附近的一个负阻和发射光谱中475nm的峰显示，在硅/二氧化硅界面激发起了与之相应的等离子体振荡。

不同介质膜的InP MIS结构界面陷阱的研究

于2010-11-23批量导入

A High Power Light Emitting Diode Module for Projection Display Application

Electron. Manuf. Packag. Technol. Soc. Chin. Inst. Electron.; IEEE Compon., Packag., Manuf. Technol. Soc. (IEEE-CPMT); Xidian University

Spatial resolved temperature measurement based on absorption spectroscopy using a single tunable diode laser

A novel method based on wavelength-multiplexed line-of-sight absorption and profile fitting for non-uniform flow field measurement is reported. A wavelength scanning combing laser temperature and current modulation WMS scheme is used to implement the wavelength-multiplexed-profile fitting method. Second harmonic (2f) signal of eight H2O transitions features near 7,170 cm(-1) are measured in one period using a single tunable diode laser. Spatial resolved temperature distribution upon a CH4/air premixed flat flame burner is obtained. The result validates the feasibility of strategy for non-uniform flow field diagnostics by means of WMS-2f TDLAS.